Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals

Hsien Chin Chiu; Chia Hsuan Wu; Che Kai Lin; Feng Tso Chien

doi:10.1016/j.mssp.2014.09.035

Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals

Hsien Chin Chiu^*, Chia Hsuan Wu, Che Kai Lin, Feng Tso Chien

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

This study investigates the effect of impact ionization using Ir, Pt, Pd, Ti gate metals and the direct correlation between these high work function metals and low frequency noise (LFN) on an In_0.4Al_0.6As/In_0.4Ga_0.6As metamorphic high electron mobility transistor (MHEMT). The effect of impact ionization on DC, RF, and cryogenic LFN is systematically studied and discussed. Gate metals with high work functions are used to suppress the kink effect and gate leakage current. Experimental results suggest that the Ir gate MHEMT exhibits superior thermal stable properties in a strong electrical field at various temperatures, associated with high gain, high current, and excellent low-frequency noise performance.

Original language	English
Pages (from-to)	41-47
Number of pages	7
Journal	Materials Science in Semiconductor Processing
Volume	30
DOIs	https://doi.org/10.1016/j.mssp.2014.09.035
State	Published - 02 2015

Bibliographical note

Publisher Copyright:
© 2014 Elsevier Ltd.

Keywords

Flicker noise
Impact ionization
Kink effect
MHEMT

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10.1016/j.mssp.2014.09.035

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@article{e2cd783e1a564067897a81b39aaa5f06,

title = "Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals",

abstract = "This study investigates the effect of impact ionization using Ir, Pt, Pd, Ti gate metals and the direct correlation between these high work function metals and low frequency noise (LFN) on an In0.4Al0.6As/In0.4Ga0.6As metamorphic high electron mobility transistor (MHEMT). The effect of impact ionization on DC, RF, and cryogenic LFN is systematically studied and discussed. Gate metals with high work functions are used to suppress the kink effect and gate leakage current. Experimental results suggest that the Ir gate MHEMT exhibits superior thermal stable properties in a strong electrical field at various temperatures, associated with high gain, high current, and excellent low-frequency noise performance.",

keywords = "Flicker noise, Impact ionization, Kink effect, MHEMT",

author = "Chiu, {Hsien Chin} and Wu, {Chia Hsuan} and Lin, {Che Kai} and Chien, {Feng Tso}",

note = "Publisher Copyright: {\textcopyright} 2014 Elsevier Ltd.",

year = "2015",

month = feb,

doi = "10.1016/j.mssp.2014.09.035",

language = "英语",

volume = "30",

pages = "41--47",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd",

}

Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals. / Chiu, Hsien Chin; Wu, Chia Hsuan; Lin, Che Kai et al.
In: Materials Science in Semiconductor Processing, Vol. 30, 02.2015, p. 41-47.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals

AU - Chiu, Hsien Chin

AU - Wu, Chia Hsuan

AU - Lin, Che Kai

AU - Chien, Feng Tso

PY - 2015/2

Y1 - 2015/2

N2 - This study investigates the effect of impact ionization using Ir, Pt, Pd, Ti gate metals and the direct correlation between these high work function metals and low frequency noise (LFN) on an In0.4Al0.6As/In0.4Ga0.6As metamorphic high electron mobility transistor (MHEMT). The effect of impact ionization on DC, RF, and cryogenic LFN is systematically studied and discussed. Gate metals with high work functions are used to suppress the kink effect and gate leakage current. Experimental results suggest that the Ir gate MHEMT exhibits superior thermal stable properties in a strong electrical field at various temperatures, associated with high gain, high current, and excellent low-frequency noise performance.

AB - This study investigates the effect of impact ionization using Ir, Pt, Pd, Ti gate metals and the direct correlation between these high work function metals and low frequency noise (LFN) on an In0.4Al0.6As/In0.4Ga0.6As metamorphic high electron mobility transistor (MHEMT). The effect of impact ionization on DC, RF, and cryogenic LFN is systematically studied and discussed. Gate metals with high work functions are used to suppress the kink effect and gate leakage current. Experimental results suggest that the Ir gate MHEMT exhibits superior thermal stable properties in a strong electrical field at various temperatures, associated with high gain, high current, and excellent low-frequency noise performance.

KW - Flicker noise

KW - Impact ionization

KW - Kink effect

KW - MHEMT

UR - http://www.scopus.com/inward/record.url?scp=84908428909&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2014.09.035

DO - 10.1016/j.mssp.2014.09.035

M3 - 文章

AN - SCOPUS:84908428909

SN - 1369-8001

VL - 30

SP - 41

EP - 47

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -

Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals

Abstract

Bibliographical note

Keywords

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