Investigation of InAlN/GaN Schottky barrier diode (SBD) on 6-inch SOI substrate

Li Yi Peng; Hsiang Chun Wang; Hou Yu Wang; Hsien Chin Chiu; Jen Inn Chyi

Investigation of InAlN/GaN Schottky barrier diode (SBD) on 6-inch SOI substrate

Li Yi Peng, Hsiang Chun Wang, Hou Yu Wang, Hsien Chin Chiu, Jen Inn Chyi

Department of Electronic Engineering

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

The low frequency noise and reverse recovery time characteristics of 6 inch InAlN/AlN/GaN Schottky barrier diode (SBD) were demonstrated and investigated on silicon-on-insulator (SOI) substrate for the first time. The Raman spectroscopy measurement indicates that the smaller epitaxy stress was obtained by adopting SOI wafer and X-ray diffraction measurements revealed that InAIN SBD on SOI achieves a flat surface and an abrupt hetero interface. Based on the DC and low frequency noise (LFN) measurement at various temperatures ranging between 300 and 450 K, the InAlN/GaN SBD on SOI design shows better forward current and reverse current, and the InAlN/GaN SBD on SOI design achieved a lower reverse recovery charge.

Original language	English
Pages	325-328
Number of pages	4
State	Published - 2016
Event	31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States Duration: 16 05 2016 → 19 05 2016

Conference

Conference	31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016
Country/Territory	United States
City	Miami
Period	16/05/16 → 19/05/16

Bibliographical note

Publisher Copyright:
© 2016, CS Mantech. All rights reserved.

Keywords

GaN
InAlN
Low frequency noise
Reverse recovery characteristics
SOI
Schottky Barrier Diode (SBD)

Cite this

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title = "Investigation of InAlN/GaN Schottky barrier diode (SBD) on 6-inch SOI substrate",

abstract = "The low frequency noise and reverse recovery time characteristics of 6 inch InAlN/AlN/GaN Schottky barrier diode (SBD) were demonstrated and investigated on silicon-on-insulator (SOI) substrate for the first time. The Raman spectroscopy measurement indicates that the smaller epitaxy stress was obtained by adopting SOI wafer and X-ray diffraction measurements revealed that InAIN SBD on SOI achieves a flat surface and an abrupt hetero interface. Based on the DC and low frequency noise (LFN) measurement at various temperatures ranging between 300 and 450 K, the InAlN/GaN SBD on SOI design shows better forward current and reverse current, and the InAlN/GaN SBD on SOI design achieved a lower reverse recovery charge.",

keywords = "GaN, InAlN, Low frequency noise, Reverse recovery characteristics, SOI, Schottky Barrier Diode (SBD)",

author = "Peng, {Li Yi} and Wang, {Hsiang Chun} and Wang, {Hou Yu} and Chiu, {Hsien Chin} and Chyi, {Jen Inn}",

note = "Publisher Copyright: {\textcopyright} 2016, CS Mantech. All rights reserved.; 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 ; Conference date: 16-05-2016 Through 19-05-2016",

year = "2016",

language = "英语",

pages = "325--328",

}

Investigation of InAlN/GaN Schottky barrier diode (SBD) on 6-inch SOI substrate. / Peng, Li Yi; Wang, Hsiang Chun; Wang, Hou Yu et al.
2016. 325-328 Paper presented at 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016, Miami, United States.

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

T1 - Investigation of InAlN/GaN Schottky barrier diode (SBD) on 6-inch SOI substrate

AU - Peng, Li Yi

AU - Wang, Hsiang Chun

AU - Wang, Hou Yu

AU - Chiu, Hsien Chin

AU - Chyi, Jen Inn

PY - 2016

Y1 - 2016

N2 - The low frequency noise and reverse recovery time characteristics of 6 inch InAlN/AlN/GaN Schottky barrier diode (SBD) were demonstrated and investigated on silicon-on-insulator (SOI) substrate for the first time. The Raman spectroscopy measurement indicates that the smaller epitaxy stress was obtained by adopting SOI wafer and X-ray diffraction measurements revealed that InAIN SBD on SOI achieves a flat surface and an abrupt hetero interface. Based on the DC and low frequency noise (LFN) measurement at various temperatures ranging between 300 and 450 K, the InAlN/GaN SBD on SOI design shows better forward current and reverse current, and the InAlN/GaN SBD on SOI design achieved a lower reverse recovery charge.

AB - The low frequency noise and reverse recovery time characteristics of 6 inch InAlN/AlN/GaN Schottky barrier diode (SBD) were demonstrated and investigated on silicon-on-insulator (SOI) substrate for the first time. The Raman spectroscopy measurement indicates that the smaller epitaxy stress was obtained by adopting SOI wafer and X-ray diffraction measurements revealed that InAIN SBD on SOI achieves a flat surface and an abrupt hetero interface. Based on the DC and low frequency noise (LFN) measurement at various temperatures ranging between 300 and 450 K, the InAlN/GaN SBD on SOI design shows better forward current and reverse current, and the InAlN/GaN SBD on SOI design achieved a lower reverse recovery charge.

KW - GaN

KW - InAlN

KW - Low frequency noise

KW - Reverse recovery characteristics

KW - SOI

KW - Schottky Barrier Diode (SBD)

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M3 - 论文

AN - SCOPUS:84978878175

SP - 325

EP - 328

T2 - 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016

Y2 - 16 May 2016 through 19 May 2016

ER -

Investigation of InAlN/GaN Schottky barrier diode (SBD) on 6-inch SOI substrate

Abstract

Conference

Bibliographical note

Keywords

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