Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method

Hung Wen Huang; Chih Chiang Kao; Jung Tang Chu; Wei Chih Wang; Tien Chang Lu; Hao Chung Kuo; Shing Chung Wang; Chang Chin Yu; Shou Yi Kuo

doi:10.1016/j.mseb.2006.09.030

Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method

Hung Wen Huang, Chih Chiang Kao, Jung Tang Chu, Wei Chih Wang, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang^*, Chang Chin Yu, Shou Yi Kuo

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

19 Scopus citations

Abstract

The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface fabricated by using Ni nano-masks and laser etching methods were demonstrated and analyzed. The experiment results observed the maximum light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface etched with the laser energy of 300 mJ/cm² was 1.55 times higher than that of a conventional LED, and the wall-plug efficiency was enhanced 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.

Original language	English
Pages (from-to)	182-186
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	136
Issue number	2-3
DOIs	https://doi.org/10.1016/j.mseb.2006.09.030
State	Published - 25 01 2007
Externally published	Yes

Keywords

Gallium nitride (GaN)
Laser etching
Light emitting diode (LED)

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10.1016/j.mseb.2006.09.030

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@article{215cac10e80f45e1932211c81fa0b3eb,

title = "Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method",

abstract = "The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface fabricated by using Ni nano-masks and laser etching methods were demonstrated and analyzed. The experiment results observed the maximum light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface etched with the laser energy of 300 mJ/cm2 was 1.55 times higher than that of a conventional LED, and the wall-plug efficiency was enhanced 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.",

keywords = "Gallium nitride (GaN), Laser etching, Light emitting diode (LED)",

author = "Huang, {Hung Wen} and Kao, {Chih Chiang} and Chu, {Jung Tang} and Wang, {Wei Chih} and Lu, {Tien Chang} and Kuo, {Hao Chung} and Wang, {Shing Chung} and Yu, {Chang Chin} and Kuo, {Shou Yi}",

year = "2007",

month = jan,

day = "25",

doi = "10.1016/j.mseb.2006.09.030",

language = "英语",

volume = "136",

pages = "182--186",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier Ltd",

number = "2-3",

}

TY - JOUR

T1 - Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method

AU - Huang, Hung Wen

AU - Kao, Chih Chiang

AU - Chu, Jung Tang

AU - Wang, Wei Chih

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

AU - Yu, Chang Chin

AU - Kuo, Shou Yi

PY - 2007/1/25

Y1 - 2007/1/25

N2 - The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface fabricated by using Ni nano-masks and laser etching methods were demonstrated and analyzed. The experiment results observed the maximum light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface etched with the laser energy of 300 mJ/cm2 was 1.55 times higher than that of a conventional LED, and the wall-plug efficiency was enhanced 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.

AB - The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface fabricated by using Ni nano-masks and laser etching methods were demonstrated and analyzed. The experiment results observed the maximum light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface etched with the laser energy of 300 mJ/cm2 was 1.55 times higher than that of a conventional LED, and the wall-plug efficiency was enhanced 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.

KW - Gallium nitride (GaN)

KW - Laser etching

KW - Light emitting diode (LED)

UR - http://www.scopus.com/inward/record.url?scp=33845934293&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2006.09.030

DO - 10.1016/j.mseb.2006.09.030

M3 - 文章

AN - SCOPUS:33845934293

SN - 0921-5107

VL - 136

SP - 182

EP - 186

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 2-3

ER -

Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method

Abstract

Keywords

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