Investigation of nano-sized hole/post patterned sapphire substrates-induced strain-related quantum-confined stark effect of InGaN-based light-emitting diodes

  • Vincent Su
  • , Po Hsun Chen
  • , Ming Lun Lee
  • , Yao Hong You
  • , Cheng Ju Hsieh
  • , Chieh Hsiung Kuan
  • , Yi Chi Chen
  • , Hung Chou Lin
  • , Han Bo Yang
  • , Ray Ming Lin
  • , Quan Yi Lee
  • , Fu Chuan Chu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper demonstrates that the efficiency of InGaN-based light-emitting diodes with nano-post patterned sapphire substrates is superior to that with nano-hole patterned sapphire substrates under the same nano-scale feature owing to reduced quantum-confined stark effect.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
DOIs
StatePublished - 2013
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: 09 06 201314 06 2013

Publication series

Name2013 Conference on Lasers and Electro-Optics, CLEO 2013

Conference

Conference2013 Conference on Lasers and Electro-Optics, CLEO 2013
Country/TerritoryUnited States
CitySan Jose, CA
Period09/06/1314/06/13

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