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Investigation of Semi-Polar GaN Grown on (0001) C-plane Nano-Sized Patterned-Sapphire Substrates

  • Vin Cent Su
  • , Po Hsun Chen
  • , Zheng Hung Hung
  • , Yao Hong You
  • , Yen Pu Chen
  • , Ta Cheng Hsu
  • , Yu Yao Lin
  • , Ray Ming Lin
  • , Chieh Hsiung Kuan*
  • *Corresponding author for this work
  • National Taiwan University
  • Kingwave Corporation
  • Epistar Corporation Taiwan

Research output: Contribution to journalConference articlepeer-review

Abstract

This paper reported the growth of semi-polar GaN epi-layers on (0001) c-plane nano-sized patterned-sapphire substrates (c-NPSSs). In addition, the impact of c-NPSSs on the quality of semi-polar film had also been studied.

Original languageEnglish
Article numberJTh2A.78
JournalOptics InfoBase Conference Papers
StatePublished - 2016
EventCLEO: Applications and Technology, CLEO AT 2016 - San Jose, United States
Duration: 05 06 201610 06 2016

Bibliographical note

Publisher Copyright:
© OSA 2016.

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