Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles

Hsien Chin Chiu*, Che Kai Lin, Chao Wei Lin, Chao Sung Lai

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

5 Scopus citations

Abstract

In this work, we have fabricated the first non-volatile memory of metal-oxide-semiconductor (MOS) capacitors embedded with Au nano-particles on GaAs substrate. After 800 °C RTA annealing for 30 s, the Au nano-particles with a narrow size distribution can be self-assembled from an ultrathin Au layer sandwiched in the gate oxide. From loop C-V measurement, large hysteresis phenomenon can indicate charge storage effect. Moreover, the GaAs substrates were pretreated by HCl(10%) + NH 4OH(1%), (NH 4) 2S X, and P 2S 5/(NH 4) 2S X solutions before tunneling oxide deposition to reduce the GaAs native oxide related surface states. Owing to the stable phosphorus oxides and sulfur bound to the Ga and As species can be efficient obtained by using P 2S 5/(NH 4) 2S X pretreatment; therefore, lowest leakage current was also observed in Al/GaAs schottky diodes with this process.

Original languageEnglish
Pages (from-to)2592-2596
Number of pages5
JournalMicroelectronics Reliability
Volume52
Issue number11
DOIs
StatePublished - 11 2012

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