Investigation of temperature dependence in the dark current of InAs diode detectors

C. H. Kuan*, Ray Ming Lin, Shiang Feng Tang, Tai Ping Sun

*Corresponding author for this work

Research output: Contribution to conferenceConference Paperpeer-review

Abstract

InAs diode detectors are good for approx. μm wavelength detection and promising to operate at high temperature (T). In order to decrease the dark current at high T, an attempt has been made to study the I-V characteristics of the PIN (S1066) and PN (S1135) diodes, and concluded the dominant current mechanics at various T.

Original languageEnglish
Pages255
Number of pages1
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe - Hamburg, Ger
Duration: 08 09 199613 09 1996

Conference

ConferenceProceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe
CityHamburg, Ger
Period08/09/9613/09/96

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