Investigation of temperature dependence in the dark current of InAs diode detectors

C. H. Kuan; Ray Ming Lin; Shiang Feng Tang; Tai Ping Sun

Investigation of temperature dependence in the dark current of InAs diode detectors

C. H. Kuan^*
, Ray Ming Lin
, Shiang Feng Tang
, Tai Ping Sun

^*Corresponding author for this work

National Taiwan University

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

InAs diode detectors are good for approx. μm wavelength detection and promising to operate at high temperature (T). In order to decrease the dark current at high T, an attempt has been made to study the I-V characteristics of the PIN (S1066) and PN (S1135) diodes, and concluded the dominant current mechanics at various T.

Original language	English
Pages	255
Number of pages	1
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe - Hamburg, Ger Duration: 08 09 1996 → 13 09 1996

Conference

Conference	Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe
City	Hamburg, Ger
Period	08/09/96 → 13/09/96

Cite this

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title = "Investigation of temperature dependence in the dark current of InAs diode detectors",

abstract = "InAs diode detectors are good for approx. μm wavelength detection and promising to operate at high temperature (T). In order to decrease the dark current at high T, an attempt has been made to study the I-V characteristics of the PIN (S1066) and PN (S1135) diodes, and concluded the dominant current mechanics at various T.",

author = "Kuan, \{C. H.\} and Lin, \{Ray Ming\} and Tang, \{Shiang Feng\} and Sun, \{Tai Ping\}",

year = "1996",

language = "英语",

pages = "255",

note = "Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe ; Conference date: 08-09-1996 Through 13-09-1996",

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TY - CONF

T1 - Investigation of temperature dependence in the dark current of InAs diode detectors

AU - Kuan, C. H.

AU - Lin, Ray Ming

AU - Tang, Shiang Feng

AU - Sun, Tai Ping

PY - 1996

Y1 - 1996

N2 - InAs diode detectors are good for approx. μm wavelength detection and promising to operate at high temperature (T). In order to decrease the dark current at high T, an attempt has been made to study the I-V characteristics of the PIN (S1066) and PN (S1135) diodes, and concluded the dominant current mechanics at various T.

AB - InAs diode detectors are good for approx. μm wavelength detection and promising to operate at high temperature (T). In order to decrease the dark current at high T, an attempt has been made to study the I-V characteristics of the PIN (S1066) and PN (S1135) diodes, and concluded the dominant current mechanics at various T.

UR - https://www.scopus.com/pages/publications/0029726254

M3 - 论文

AN - SCOPUS:0029726254

SP - 255

T2 - Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe

Y2 - 8 September 1996 through 13 September 1996

ER -

Investigation of temperature dependence in the dark current of InAs diode detectors

Abstract

Conference

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