Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs

Wen Hsin Wu; Yong Han Lin; Che Kai Lin; Fan Hsiu Huang; Wei Chou Wang

Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs

Wen Hsin Wu^*
, Yong Han Lin
, Che Kai Lin
, Fan Hsiu Huang
, Wei Chou Wang

^*Corresponding author for this work

WIN Semiconductors Corp.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, the influence of un-doped GaN cap layer on AlGaN/GaN high electron mobility transistors (HEMTs) has been studied by using DC, pulsed I-V, capacitance-voltage (C-V), and load-pull characterizations. The device without cap layer is found to exhibit smaller dynamic range (Von-Vth) compared to that of the device with cap layer. However, the lower interface trap density in the device without cap layer can lead to higher drain current with different quiescent points, resulting in better RF power and gain at 2.7 GHz.

Original language	English
Title of host publication	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers
Publisher	CS Mantech
Pages	81-84
Number of pages	4
ISBN (Electronic)	9781893580312
State	Published - 2021
Externally published	Yes
Event	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 - Orlando, Virtual, United States Duration: 24 05 2021 → 27 05 2021

Publication series

Name	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Conference

Conference	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021
Country/Territory	United States
City	Orlando, Virtual
Period	24/05/21 → 27/05/21

Bibliographical note

Publisher Copyright:
© 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.

Keywords

C-V
GaN
GaN cap
HEMT
Interface
Pulsed I-V
Trap

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Wu, W. H., Lin, Y. H., Lin, C. K., Huang, F. H., & Wang, W. C. (2021). Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs. In CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers (pp. 81-84). (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers). CS Mantech.

Wu, Wen Hsin ; Lin, Yong Han ; Lin, Che Kai et al. / Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. pp. 81-84 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

@inproceedings{ca896fb2dcad4d849e84051b0c535c79,

title = "Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs",

abstract = "In this work, the influence of un-doped GaN cap layer on AlGaN/GaN high electron mobility transistors (HEMTs) has been studied by using DC, pulsed I-V, capacitance-voltage (C-V), and load-pull characterizations. The device without cap layer is found to exhibit smaller dynamic range (Von-Vth) compared to that of the device with cap layer. However, the lower interface trap density in the device without cap layer can lead to higher drain current with different quiescent points, resulting in better RF power and gain at 2.7 GHz.",

keywords = "C-V, GaN, GaN cap, HEMT, Interface, Pulsed I-V, Trap",

author = "Wu, \{Wen Hsin\} and Lin, \{Yong Han\} and Lin, \{Che Kai\} and Huang, \{Fan Hsiu\} and Wang, \{Wei Chou\}",

note = "Publisher Copyright: {\textcopyright} 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.; 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 ; Conference date: 24-05-2021 Through 27-05-2021",

year = "2021",

language = "英语",

series = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

publisher = "CS Mantech",

pages = "81--84",

booktitle = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

}

Wu, WH, Lin, YH, Lin, CK, Huang, FH & Wang, WC 2021, Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs. in CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, CS Mantech, pp. 81-84, 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021, Orlando, Virtual, United States, 24/05/21.

Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs. / Wu, Wen Hsin; Lin, Yong Han; Lin, Che Kai et al.
CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. p. 81-84 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs

AU - Wu, Wen Hsin

AU - Lin, Yong Han

AU - Lin, Che Kai

AU - Huang, Fan Hsiu

AU - Wang, Wei Chou

PY - 2021

Y1 - 2021

N2 - In this work, the influence of un-doped GaN cap layer on AlGaN/GaN high electron mobility transistors (HEMTs) has been studied by using DC, pulsed I-V, capacitance-voltage (C-V), and load-pull characterizations. The device without cap layer is found to exhibit smaller dynamic range (Von-Vth) compared to that of the device with cap layer. However, the lower interface trap density in the device without cap layer can lead to higher drain current with different quiescent points, resulting in better RF power and gain at 2.7 GHz.

AB - In this work, the influence of un-doped GaN cap layer on AlGaN/GaN high electron mobility transistors (HEMTs) has been studied by using DC, pulsed I-V, capacitance-voltage (C-V), and load-pull characterizations. The device without cap layer is found to exhibit smaller dynamic range (Von-Vth) compared to that of the device with cap layer. However, the lower interface trap density in the device without cap layer can lead to higher drain current with different quiescent points, resulting in better RF power and gain at 2.7 GHz.

KW - C-V

KW - GaN

KW - GaN cap

KW - HEMT

KW - Interface

KW - Pulsed I-V

KW - Trap

UR - https://www.scopus.com/pages/publications/85124548853

M3 - 会议稿件

AN - SCOPUS:85124548853

T3 - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

SP - 81

EP - 84

BT - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

PB - CS Mantech

T2 - 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021

Y2 - 24 May 2021 through 27 May 2021

ER -

Wu WH, Lin YH, Lin CK, Huang FH, Wang WC. Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs. In CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech. 2021. p. 81-84. (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

Investigation of Un-doped GaN Cap Layer on RF and Trap Related Characteristics in AlGaN/GaN HEMTs

Abstract

Publication series

Conference

Bibliographical note

Keywords

UN SDGs

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