Investigation on cu TSV-induced KOZ in silicon chips: Simulations and experiments

Engineering

• Experiments 100%
• Simulation 100%
• Key Parameter 33%
• Carrier Mobility 33%
• Integration 33%
• Integrated Circuit 33%
• Models 16%
• Properties 16%
• Determines 16%
• Good Agreement 16%
• Sio2 Layer 16%
• Zeros 16%
• Elements 16%
• Numerical Calculation 16%
• Temperature Stress 16%

Computer Science

• Simulation 100%
• through silicon vias 100%
• Integrated Circuit 66%
• Models 33%
• Numerical Calculation 33%

Material Science

• Silicon 100%
• Electronic Circuit 33%
• Carrier Mobility 33%
• Devices 16%
• Transistor 16%
• Temperature 16%
• Finite Element Methods 16%
• Oxide Semiconductor 16%
• Metal Oxide 16%
• Materials Property 16%
• Silicon Material 16%