Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film

Kow Ming Chang; Wen Hsien Tzeng; Kou Chen Liu; Yi Chun Chan; Chun Chih Kuo

doi:10.1016/j.microrel.2010.05.012

Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film

Kow Ming Chang, Wen Hsien Tzeng, Kou Chen Liu^*, Yi Chun Chan, Chun Chih Kuo

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

16 Scopus citations

Abstract

Effect of ultraviolet (UV) light exposure on the resistive switching characteristics of a ITO/HfOx/TiN structure were investigated in this study. Samples exposed with and without ITO shield film exhibit distinct switching characteristics, including leakage current, I-V curves, set and reset voltage fluctuation. Based on random circuit network simulation by Liu et al., we suggest the distinction was attributed to the different filament shapes during forming process. Defects preexisted inside the HfOx film can cause large difference on the electrical properties. Therefore, the UV laser exposure is a critical issue on the electrical characteristics of RRAM devices.

Original language	English
Pages (from-to)	1931-1934
Number of pages	4
Journal	Microelectronics Reliability
Volume	50
Issue number	12
DOIs	https://doi.org/10.1016/j.microrel.2010.05.012
State	Published - 12 2010

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title = "Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film",

abstract = "Effect of ultraviolet (UV) light exposure on the resistive switching characteristics of a ITO/HfOx/TiN structure were investigated in this study. Samples exposed with and without ITO shield film exhibit distinct switching characteristics, including leakage current, I-V curves, set and reset voltage fluctuation. Based on random circuit network simulation by Liu et al., we suggest the distinction was attributed to the different filament shapes during forming process. Defects preexisted inside the HfOx film can cause large difference on the electrical properties. Therefore, the UV laser exposure is a critical issue on the electrical characteristics of RRAM devices.",

author = "Chang, {Kow Ming} and Tzeng, {Wen Hsien} and Liu, {Kou Chen} and Chan, {Yi Chun} and Kuo, {Chun Chih}",

year = "2010",

month = dec,

doi = "10.1016/j.microrel.2010.05.012",

language = "英语",

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T1 - Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film

AU - Chang, Kow Ming

AU - Tzeng, Wen Hsien

AU - Liu, Kou Chen

AU - Chan, Yi Chun

AU - Kuo, Chun Chih

PY - 2010/12

Y1 - 2010/12

N2 - Effect of ultraviolet (UV) light exposure on the resistive switching characteristics of a ITO/HfOx/TiN structure were investigated in this study. Samples exposed with and without ITO shield film exhibit distinct switching characteristics, including leakage current, I-V curves, set and reset voltage fluctuation. Based on random circuit network simulation by Liu et al., we suggest the distinction was attributed to the different filament shapes during forming process. Defects preexisted inside the HfOx film can cause large difference on the electrical properties. Therefore, the UV laser exposure is a critical issue on the electrical characteristics of RRAM devices.

AB - Effect of ultraviolet (UV) light exposure on the resistive switching characteristics of a ITO/HfOx/TiN structure were investigated in this study. Samples exposed with and without ITO shield film exhibit distinct switching characteristics, including leakage current, I-V curves, set and reset voltage fluctuation. Based on random circuit network simulation by Liu et al., we suggest the distinction was attributed to the different filament shapes during forming process. Defects preexisted inside the HfOx film can cause large difference on the electrical properties. Therefore, the UV laser exposure is a critical issue on the electrical characteristics of RRAM devices.

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U2 - 10.1016/j.microrel.2010.05.012

DO - 10.1016/j.microrel.2010.05.012

M3 - 文章

AN - SCOPUS:78649448172

SN - 0026-2714

VL - 50

SP - 1931

EP - 1934

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 12

ER -

Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film

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