Investigation on the stoichiometric deviations of electrodeposited nano-CdTe compound by a novel numerical simulation

  • Shu Ying Yang*
  • , Herng Yih Ueng
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A kinetic model for linear-sweep voltammetry has been developed and modified. The simulation of CdTe electrodeposition has been performed in the acidic electrolyte containing reducible ions of Cd2+ and HTeO 2+, and the potential can be predicted to get good quality photosensitive material. A numerical simulation for the stoichiometric determination of electrodepo-sited CdTe thin film is presented for the first time, and the stoi-chiometric deviation can be controlled accurately. Well-connected granular CdTe thin films have been deposited at PPS, but are slightly p-type due to cadmium vacancies (VCd). In order to determine the stoichiometry of samples with a small deviation, it is necessary to decrease the concentration of HTeO2+. The stoi-chiometry deviations fall in the 50.001% range can be estimated. The control of stoichiometric deviation in Cd-rich is much better than in Te-rich by electrodeposited potential.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 06 201124 06 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
Country/TerritoryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • CdTe
  • electrodeposition
  • linear-sweep voltammetry
  • numerical simulation
  • stoichiometric deviation

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