Investigations and improvements of AlInN/GaN HEMTs grown on Si

Jen Inn Chyi; Yue Ming Hsin; Geng Yen Lee; Hsien Chin Chiu

doi:10.1149/06601.0217ecst

Investigations and improvements of AlInN/GaN HEMTs grown on Si

Jen Inn Chyi, Yue Ming Hsin, Geng Yen Lee, Hsien Chin Chiu

Department of Electronic Engineering

National Central University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper reports our continuous efforts and achievements in understanding and improving AlInN/AlN/GaN heterostructure for high performance field-effect transistors and switching devices. AlInN/AlN/GaN high electron mobility transistors (HEMTs) with high electron mobility and low sheet resistance have been demonstrated on 6" Si(111) substrates. It is found that electron mobility of AlInN/AlN/GaN HEMTs is closely related to the presence and quality of the AlN spacer layer, which determines the dominant carrier scattering mechanism. A comparative study on the electrical characteristics of AlInN/AlN/GaN and AlGaN/GaN metal-insulator-semiconductor (MIS)-HEMTs shows that both devices exhibit similar low-frequency noise behavior and no obvious generation-recombination (g-r) noise component, implying carrier number fluctuation is the dominant noise mechanism in both structures.

Original language	English
Title of host publication	Wide Bandgap Semiconductor Materials and Devices 16
Editors	S. Jang, K. Shenai, G. W. Hunter, F. Ren, C. O'Dwyer, K. C. Mishra
Publisher	Electrochemical Society Inc.
Pages	217-222
Number of pages	6
Edition	1
ISBN (Electronic)	9781607685913
DOIs	https://doi.org/10.1149/06601.0217ecst
State	Published - 2015
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting - Chicago, United States Duration: 24 05 2015 → 28 05 2015

Publication series

Name	ECS Transactions
Number	1
Volume	66
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting
Country/Territory	United States
City	Chicago
Period	24/05/15 → 28/05/15

Bibliographical note

Publisher Copyright:
© The Electrochemical Society.

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10.1149/06601.0217ecst

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Chyi, J. I., Hsin, Y. M., Lee, G. Y., & Chiu, H. C. (2015). Investigations and improvements of AlInN/GaN HEMTs grown on Si. In S. Jang, K. Shenai, G. W. Hunter, F. Ren, C. O'Dwyer, & K. C. Mishra (Eds.), Wide Bandgap Semiconductor Materials and Devices 16 (1 ed., pp. 217-222). (ECS Transactions; Vol. 66, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/06601.0217ecst

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title = "Investigations and improvements of AlInN/GaN HEMTs grown on Si",

abstract = "This paper reports our continuous efforts and achievements in understanding and improving AlInN/AlN/GaN heterostructure for high performance field-effect transistors and switching devices. AlInN/AlN/GaN high electron mobility transistors (HEMTs) with high electron mobility and low sheet resistance have been demonstrated on 6{"} Si(111) substrates. It is found that electron mobility of AlInN/AlN/GaN HEMTs is closely related to the presence and quality of the AlN spacer layer, which determines the dominant carrier scattering mechanism. A comparative study on the electrical characteristics of AlInN/AlN/GaN and AlGaN/GaN metal-insulator-semiconductor (MIS)-HEMTs shows that both devices exhibit similar low-frequency noise behavior and no obvious generation-recombination (g-r) noise component, implying carrier number fluctuation is the dominant noise mechanism in both structures.",

author = "Chyi, {Jen Inn} and Hsin, {Yue Ming} and Lee, {Geng Yen} and Chiu, {Hsien Chin}",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",

year = "2015",

doi = "10.1149/06601.0217ecst",

language = "英语",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "1",

pages = "217--222",

editor = "S. Jang and K. Shenai and Hunter, {G. W.} and F. Ren and C. O'Dwyer and Mishra, {K. C.}",

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}

Chyi, JI, Hsin, YM, Lee, GY & Chiu, HC 2015, Investigations and improvements of AlInN/GaN HEMTs grown on Si. in S Jang, K Shenai, GW Hunter, F Ren, C O'Dwyer & KC Mishra (eds), Wide Bandgap Semiconductor Materials and Devices 16. 1 edn, ECS Transactions, no. 1, vol. 66, Electrochemical Society Inc., pp. 217-222, Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting, Chicago, United States, 24/05/15. https://doi.org/10.1149/06601.0217ecst

Investigations and improvements of AlInN/GaN HEMTs grown on Si. / Chyi, Jen Inn; Hsin, Yue Ming; Lee, Geng Yen et al.
Wide Bandgap Semiconductor Materials and Devices 16. ed. / S. Jang; K. Shenai; G. W. Hunter; F. Ren; C. O'Dwyer; K. C. Mishra. 1. ed. Electrochemical Society Inc., 2015. p. 217-222 (ECS Transactions; Vol. 66, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigations and improvements of AlInN/GaN HEMTs grown on Si

AU - Chyi, Jen Inn

AU - Hsin, Yue Ming

AU - Lee, Geng Yen

AU - Chiu, Hsien Chin

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2015

Y1 - 2015

N2 - This paper reports our continuous efforts and achievements in understanding and improving AlInN/AlN/GaN heterostructure for high performance field-effect transistors and switching devices. AlInN/AlN/GaN high electron mobility transistors (HEMTs) with high electron mobility and low sheet resistance have been demonstrated on 6" Si(111) substrates. It is found that electron mobility of AlInN/AlN/GaN HEMTs is closely related to the presence and quality of the AlN spacer layer, which determines the dominant carrier scattering mechanism. A comparative study on the electrical characteristics of AlInN/AlN/GaN and AlGaN/GaN metal-insulator-semiconductor (MIS)-HEMTs shows that both devices exhibit similar low-frequency noise behavior and no obvious generation-recombination (g-r) noise component, implying carrier number fluctuation is the dominant noise mechanism in both structures.

AB - This paper reports our continuous efforts and achievements in understanding and improving AlInN/AlN/GaN heterostructure for high performance field-effect transistors and switching devices. AlInN/AlN/GaN high electron mobility transistors (HEMTs) with high electron mobility and low sheet resistance have been demonstrated on 6" Si(111) substrates. It is found that electron mobility of AlInN/AlN/GaN HEMTs is closely related to the presence and quality of the AlN spacer layer, which determines the dominant carrier scattering mechanism. A comparative study on the electrical characteristics of AlInN/AlN/GaN and AlGaN/GaN metal-insulator-semiconductor (MIS)-HEMTs shows that both devices exhibit similar low-frequency noise behavior and no obvious generation-recombination (g-r) noise component, implying carrier number fluctuation is the dominant noise mechanism in both structures.

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EP - 222

BT - Wide Bandgap Semiconductor Materials and Devices 16

A2 - Jang, S.

A2 - Shenai, K.

A2 - Hunter, G. W.

A2 - Ren, F.

A2 - O'Dwyer, C.

A2 - Mishra, K. C.

PB - Electrochemical Society Inc.

T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting

Y2 - 24 May 2015 through 28 May 2015

ER -

Investigations and improvements of AlInN/GaN HEMTs grown on Si

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