Ion sensing improvements of hafnium oxide by nitrogen incorporation

Chao Sung Lai; Chia Ming Yang; T. F. Lue; Cheng En Lue; Chih Yao Wang; H. P. Ko; Tzu Ming Wang

Ion sensing improvements of hafnium oxide by nitrogen incorporation

Chao Sung Lai^*, Chia Ming Yang, T. F. Lue, Cheng En Lue, Chih Yao Wang, H. P. Ko, Tzu Ming Wang

^*Corresponding author for this work

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

This is the first time that hafnium oxynitride (HfO_xN _y) have been applied to hydrogen ion sensing technology. HfO _xN_y, and HfO₂ were prepared in different ratio Ar/N₂/O₂ gas mixture by sputter with Hafnium target. The sensitivity for all samples could be improved for at least 3.3mV/pH by 12 hours R.O. water immersion. The optimized condition for HfO_xN _y-EIS was sputtering in the ambient of N₂ ratio 10% and achieved highest sensitivity (56.64mV/pH) and lowest drift (1.42mV/hr) and hysteresis (1.7mV). This material and process could also improve membrane thermal stability and integrate easily with standard CMOS process.

Original language	English
Title of host publication	2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
Pages	569-572
Number of pages	4
State	Published - 2004
Event	2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur, Malaysia Duration: 04 12 2004 → 09 12 2004

Publication series

Name	Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics

Conference

Conference	2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
Country/Territory	Malaysia
City	Kuala Lumpur
Period	04/12/04 → 09/12/04

Cite this

@inproceedings{21ecab4379444c0dbb4b5511b2a7b50a,

title = "Ion sensing improvements of hafnium oxide by nitrogen incorporation",

abstract = "This is the first time that hafnium oxynitride (HfOxN y) have been applied to hydrogen ion sensing technology. HfO xNy, and HfO2 were prepared in different ratio Ar/N2/O2 gas mixture by sputter with Hafnium target. The sensitivity for all samples could be improved for at least 3.3mV/pH by 12 hours R.O. water immersion. The optimized condition for HfOxN y-EIS was sputtering in the ambient of N2 ratio 10% and achieved highest sensitivity (56.64mV/pH) and lowest drift (1.42mV/hr) and hysteresis (1.7mV). This material and process could also improve membrane thermal stability and integrate easily with standard CMOS process.",

author = "Lai, {Chao Sung} and Yang, {Chia Ming} and Lue, {T. F.} and Lue, {Cheng En} and Wang, {Chih Yao} and Ko, {H. P.} and Wang, {Tzu Ming}",

year = "2004",

language = "英语",

isbn = "0780386582",

series = "Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics",

pages = "569--572",

booktitle = "2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004",

note = "2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 ; Conference date: 04-12-2004 Through 09-12-2004",

}

Lai, CS, Yang, CM, Lue, TF, Lue, CE, Wang, CY, Ko, HP & Wang, TM 2004, Ion sensing improvements of hafnium oxide by nitrogen incorporation. in 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004., 1620950, Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics, pp. 569-572, 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004, Kuala Lumpur, Malaysia, 04/12/04.

Ion sensing improvements of hafnium oxide by nitrogen incorporation. / Lai, Chao Sung; Yang, Chia Ming; Lue, T. F. et al.
2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004. 2004. p. 569-572 1620950 (Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ion sensing improvements of hafnium oxide by nitrogen incorporation

AU - Lai, Chao Sung

AU - Yang, Chia Ming

AU - Lue, T. F.

AU - Lue, Cheng En

AU - Wang, Chih Yao

AU - Ko, H. P.

AU - Wang, Tzu Ming

PY - 2004

Y1 - 2004

N2 - This is the first time that hafnium oxynitride (HfOxN y) have been applied to hydrogen ion sensing technology. HfO xNy, and HfO2 were prepared in different ratio Ar/N2/O2 gas mixture by sputter with Hafnium target. The sensitivity for all samples could be improved for at least 3.3mV/pH by 12 hours R.O. water immersion. The optimized condition for HfOxN y-EIS was sputtering in the ambient of N2 ratio 10% and achieved highest sensitivity (56.64mV/pH) and lowest drift (1.42mV/hr) and hysteresis (1.7mV). This material and process could also improve membrane thermal stability and integrate easily with standard CMOS process.

AB - This is the first time that hafnium oxynitride (HfOxN y) have been applied to hydrogen ion sensing technology. HfO xNy, and HfO2 were prepared in different ratio Ar/N2/O2 gas mixture by sputter with Hafnium target. The sensitivity for all samples could be improved for at least 3.3mV/pH by 12 hours R.O. water immersion. The optimized condition for HfOxN y-EIS was sputtering in the ambient of N2 ratio 10% and achieved highest sensitivity (56.64mV/pH) and lowest drift (1.42mV/hr) and hysteresis (1.7mV). This material and process could also improve membrane thermal stability and integrate easily with standard CMOS process.

UR - http://www.scopus.com/inward/record.url?scp=51349120096&partnerID=8YFLogxK

M3 - 会议稿件

AN - SCOPUS:51349120096

SN - 0780386582

SN - 9780780386587

T3 - Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics

SP - 569

EP - 572

BT - 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004

T2 - 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004

Y2 - 4 December 2004 through 9 December 2004

ER -

Ion sensing improvements of hafnium oxide by nitrogen incorporation

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