Ir/Pt Schottky contact oxidation for nitride-based Schottky barrier diodes

P. C. Chang; C. L. Yu; C. H. Liu; S. J. Chang; Y. K. Su; R. W. Chuang; Y. J. Chiu

doi:10.1002/pssc.200674251

Ir/Pt Schottky contact oxidation for nitride-based Schottky barrier diodes

P. C. Chang, C. L. Yu, C. H. Liu, S. J. Chang, Y. K. Su, R. W. Chuang, Y. J. Chiu

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

We have fabricated Schottky diodes on GaN epitaxial wafer by using Ir/Pt Schottky contacts. After oxidation, the measured leakage current was decreased from 116 nA to 17.8 pA. In other words, the leakage current after annealing in O₂ was shown to be about four orders of magnitude smaller than that before annealing. These improvements may be attributed to IrO_x formation of the metal layer, improvement of interface between the Schottky contact and the GaN layer and curing of defects due to oxidation. We also found that the Schottky barrier height and thermal stability after annealing is better than without annealing.

Original language	English
Pages (from-to)	1625-1628
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	5
DOIs	https://doi.org/10.1002/pssc.200674251
State	Published - 2007
Externally published	Yes
Event	33rd International Symposium on Compound Semiconductors, ISCS-2006 - Vancouver, BC, Canada Duration: 13 08 2006 → 17 08 2006

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@article{492a70539bbe4b60b59d1fcec0bda720,

title = "Ir/Pt Schottky contact oxidation for nitride-based Schottky barrier diodes",

abstract = "We have fabricated Schottky diodes on GaN epitaxial wafer by using Ir/Pt Schottky contacts. After oxidation, the measured leakage current was decreased from 116 nA to 17.8 pA. In other words, the leakage current after annealing in O2 was shown to be about four orders of magnitude smaller than that before annealing. These improvements may be attributed to IrOx formation of the metal layer, improvement of interface between the Schottky contact and the GaN layer and curing of defects due to oxidation. We also found that the Schottky barrier height and thermal stability after annealing is better than without annealing.",

author = "Chang, {P. C.} and Yu, {C. L.} and Liu, {C. H.} and Chang, {S. J.} and Su, {Y. K.} and Chuang, {R. W.} and Chiu, {Y. J.}",

year = "2007",

doi = "10.1002/pssc.200674251",

language = "英语",

volume = "4",

pages = "1625--1628",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "5",

note = "33rd International Symposium on Compound Semiconductors, ISCS-2006 ; Conference date: 13-08-2006 Through 17-08-2006",

}

TY - JOUR

T1 - Ir/Pt Schottky contact oxidation for nitride-based Schottky barrier diodes

AU - Chang, P. C.

AU - Yu, C. L.

AU - Liu, C. H.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chuang, R. W.

AU - Chiu, Y. J.

PY - 2007

Y1 - 2007

N2 - We have fabricated Schottky diodes on GaN epitaxial wafer by using Ir/Pt Schottky contacts. After oxidation, the measured leakage current was decreased from 116 nA to 17.8 pA. In other words, the leakage current after annealing in O2 was shown to be about four orders of magnitude smaller than that before annealing. These improvements may be attributed to IrOx formation of the metal layer, improvement of interface between the Schottky contact and the GaN layer and curing of defects due to oxidation. We also found that the Schottky barrier height and thermal stability after annealing is better than without annealing.

AB - We have fabricated Schottky diodes on GaN epitaxial wafer by using Ir/Pt Schottky contacts. After oxidation, the measured leakage current was decreased from 116 nA to 17.8 pA. In other words, the leakage current after annealing in O2 was shown to be about four orders of magnitude smaller than that before annealing. These improvements may be attributed to IrOx formation of the metal layer, improvement of interface between the Schottky contact and the GaN layer and curing of defects due to oxidation. We also found that the Schottky barrier height and thermal stability after annealing is better than without annealing.

UR - http://www.scopus.com/inward/record.url?scp=49549119982&partnerID=8YFLogxK

U2 - 10.1002/pssc.200674251

DO - 10.1002/pssc.200674251

M3 - 会议文章

AN - SCOPUS:49549119982

SN - 1862-6351

VL - 4

SP - 1625

EP - 1628

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 5

T2 - 33rd International Symposium on Compound Semiconductors, ISCS-2006

Y2 - 13 August 2006 through 17 August 2006

ER -

Ir/Pt Schottky contact oxidation for nitride-based Schottky barrier diodes

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