K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology

Hsien Chin Chiu; Shih Cheng Yang; Cheng Kuo Lin; Ming Jyh Hwu; H. K. Chiou; Yi Jen Chan

doi:10.1109/LED.2004.827282

K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology

Hsien Chin Chiu^*
, Shih Cheng Yang
, Cheng Kuo Lin
, Ming Jyh Hwu
, H. K. Chiou
, Yi Jen Chan

^*Corresponding author for this work

National Central University

Research output: Contribution to journal › Journal Letter › peer-review

4 Scopus citations

Abstract

A K-band (20 GHz) monolithic amplifier was developed and fabricated by adopting a low-κ benzocyclobutene (BCB) coplanar waveguide (CPW) line and InGaP-InGaAs doped-channel HFETs (DCFETs). This monolithic microwave integrated circuit (MMIC) utilizes a high impedance BCB CPW microstrip line (Z₀ = 70 Ω) for the biasing circuits, and a Z₀ = 50 Ω line for the RF signal transmission. The low dielectric constant characteristic of the BCB interlayer is beneficial for a common-ground bridge process, which reduces the parasitics. The calculated loss tan δ is 0.036 for the BCB at 20 GHz. The one-stage MMIC amplifier achieves an S₂₁ of 5 dB at 20 GHz, which is the first demonstration of the K-band InGaP-InGaAs DCFET monolithic circuit.

Original language	English
Pages (from-to)	253-255
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	5
DOIs	https://doi.org/10.1109/LED.2004.827282
State	Published - 05 2004
Externally published	Yes

Keywords

Benzocyclobutene (BCB) interlayer
Coplanar waveguide (CPW)
Doped channel HFET (DCFET)
K-band monolithic microwave integrated circuit (MMIC)

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10.1109/LED.2004.827282

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@article{b349fc7f0e72434a86ace798bd34698d,

title = "K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology",

abstract = "A K-band (20 GHz) monolithic amplifier was developed and fabricated by adopting a low-κ benzocyclobutene (BCB) coplanar waveguide (CPW) line and InGaP-InGaAs doped-channel HFETs (DCFETs). This monolithic microwave integrated circuit (MMIC) utilizes a high impedance BCB CPW microstrip line (Z0 = 70 Ω) for the biasing circuits, and a Z0 = 50 Ω line for the RF signal transmission. The low dielectric constant characteristic of the BCB interlayer is beneficial for a common-ground bridge process, which reduces the parasitics. The calculated loss tan δ is 0.036 for the BCB at 20 GHz. The one-stage MMIC amplifier achieves an S21 of 5 dB at 20 GHz, which is the first demonstration of the K-band InGaP-InGaAs DCFET monolithic circuit.",

keywords = "Benzocyclobutene (BCB) interlayer, Coplanar waveguide (CPW), Doped channel HFET (DCFET), K-band monolithic microwave integrated circuit (MMIC)",

author = "Chiu, \{Hsien Chin\} and Yang, \{Shih Cheng\} and Lin, \{Cheng Kuo\} and Hwu, \{Ming Jyh\} and Chiou, \{H. K.\} and Chan, \{Yi Jen\}",

year = "2004",

month = may,

doi = "10.1109/LED.2004.827282",

language = "英语",

volume = "25",

pages = "253--255",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology

AU - Chiu, Hsien Chin

AU - Yang, Shih Cheng

AU - Lin, Cheng Kuo

AU - Hwu, Ming Jyh

AU - Chiou, H. K.

AU - Chan, Yi Jen

PY - 2004/5

Y1 - 2004/5

N2 - A K-band (20 GHz) monolithic amplifier was developed and fabricated by adopting a low-κ benzocyclobutene (BCB) coplanar waveguide (CPW) line and InGaP-InGaAs doped-channel HFETs (DCFETs). This monolithic microwave integrated circuit (MMIC) utilizes a high impedance BCB CPW microstrip line (Z0 = 70 Ω) for the biasing circuits, and a Z0 = 50 Ω line for the RF signal transmission. The low dielectric constant characteristic of the BCB interlayer is beneficial for a common-ground bridge process, which reduces the parasitics. The calculated loss tan δ is 0.036 for the BCB at 20 GHz. The one-stage MMIC amplifier achieves an S21 of 5 dB at 20 GHz, which is the first demonstration of the K-band InGaP-InGaAs DCFET monolithic circuit.

AB - A K-band (20 GHz) monolithic amplifier was developed and fabricated by adopting a low-κ benzocyclobutene (BCB) coplanar waveguide (CPW) line and InGaP-InGaAs doped-channel HFETs (DCFETs). This monolithic microwave integrated circuit (MMIC) utilizes a high impedance BCB CPW microstrip line (Z0 = 70 Ω) for the biasing circuits, and a Z0 = 50 Ω line for the RF signal transmission. The low dielectric constant characteristic of the BCB interlayer is beneficial for a common-ground bridge process, which reduces the parasitics. The calculated loss tan δ is 0.036 for the BCB at 20 GHz. The one-stage MMIC amplifier achieves an S21 of 5 dB at 20 GHz, which is the first demonstration of the K-band InGaP-InGaAs DCFET monolithic circuit.

KW - Benzocyclobutene (BCB) interlayer

KW - Coplanar waveguide (CPW)

KW - Doped channel HFET (DCFET)

KW - K-band monolithic microwave integrated circuit (MMIC)

UR - https://www.scopus.com/pages/publications/2442598208

U2 - 10.1109/LED.2004.827282

DO - 10.1109/LED.2004.827282

M3 - 快报

AN - SCOPUS:2442598208

SN - 0741-3106

VL - 25

SP - 253

EP - 255

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology

Abstract

Keywords

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