@inproceedings{c710c9085f5740858dab507f07959d97,
title = "Ka-band high gain low noise amplifier by stacked-GCPW transmission line",
abstract = "A high gain Ka-band CMOS Low-Noise-Amplifier is proposed in this paper. The CMOS LNA based on 4 stages common source structure. In each stage was connected by Stacked-Grounded-Coplanar-Waveguide transmission line structure in a 0.18-μm CMOS technology to reduce the loss from silicon substrate. The design of two stages noise matching increases the noise isolation between the gain matching stages and noise matching stages. The power gain of the LNA is higher than 20dB from 30GHz to 34GHz with 4GHz band width. The measured noise about 7dB from 30Ghz-34GHz. The power consumption of the LNA is only 40 mW.",
keywords = "GCPW, High-gain, Low-Noise Amplifiers (LNAs), S-GCPW",
author = "Chen, \{Ting Huei\} and Chiu, \{Hsien Chin\}",
year = "2010",
doi = "10.1109/ICMMT.2010.5524908",
language = "英语",
isbn = "9781424457052",
series = "2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010",
pages = "221--224",
booktitle = "2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010",
note = "2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010 ; Conference date: 08-05-2010 Through 11-05-2010",
}