Label-free detection of rheumatoid factor using YbY_xO_y electrolyte-insulator-semiconductor devices

In this study, we investigated the effect of yttrium content on the structural properties and sensing characteristics of YbY_xO_y sensing membranes for electrolyte-insulator-semiconductor (EIS) sensors to detect the rheumatoid factor (RF). The YbY_xO_y EIS device prepared at the 60 W plasma condition exhibited a higher sensitivity of 65.77 mV/pH, a lower hysteresis voltage of ~1 mV, and a smaller drift rate of 0.14 mV/h than did those prepared at the other conditions. We attribute this behavior to the optimal yttrium content in the YbY_xO_y film forming a smooth surface. Furthermore, we used a novel YbTi_xO_y EIS biosensor to measure the RF antigen in human serum because of its rapid and label-free detection. Two different techniques were used for the immobilization of RF antibody onto the surface of an YbTi_xO_y EIS sensor. The RF antibody was directly immobilized on the EIS surface modified with 3-aminopropyltriethoxysilane (APTES) followed by glutaraldehyde (GA). In contrast, a mixture of 1-ethyl-3-(3-dimethylamino-propyl)carbodiimide (EDC) and N-hydroxysuccinimide (NHS) solution was used to functionalize the carboxyl groups at the tail of RF antibodies. RF antibodies functionalized with the active NHS esters were covalently immobilized on the APTES-modified YbTi_xO_y surface. The immobilized RF antibodies on the EIS that are functionalized with the EDC and NHS exhibit higher (41.11mV/pC_RF) for detection of serum RF antigen in the range 10^-7 to 10^-3 M, compared to traditional antibody immobilization technique via APTES and GA linkage. The YbTi_xO_y EIS biosensor is a promising analytical tool for RF antigen monitoring due to its good sensitivity, stability and repeatability.