Lifetime of excess electrons in Cu–Zn–Sn–Se powders

G. F. Novikov; M. V. Gapanovich; V. F. Gremenok; K. V. Bocharov; W. T. Tsai; Ming Jer Jeng; Liann Be Chang

doi:10.1134/S1063782617010171

Lifetime of excess electrons in Cu–Zn–Sn–Se powders

G. F. Novikov^*, M. V. Gapanovich, V. F. Gremenok, K. V. Bocharov, W. T. Tsai, Ming Jer Jeng, Liann Be Chang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

The method of time-resolved microwave photoconductivity at a frequency of 36 GHz in the range of temperatures of 200–300 K is used to study the kinetics of the annihilation of charge carriers in Cu–Zn–Sn–Se powders obtained by the solid-phase method of synthesis in cells. The lifetime of excess electrons at room temperature is found to be shorter than 5 ns. The activation energy for the process of recombination amounted to E_a ~ 0.054 eV.

Original language	English
Pages (from-to)	18-22
Number of pages	5
Journal	Semiconductors
Volume	51
Issue number	1
DOIs	https://doi.org/10.1134/S1063782617010171
State	Published - 01 01 2017

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© 2017, Pleiades Publishing, Ltd.

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@article{f61d3c75e3694ccca703d250a034afe8,

title = "Lifetime of excess electrons in Cu–Zn–Sn–Se powders",

abstract = "The method of time-resolved microwave photoconductivity at a frequency of 36 GHz in the range of temperatures of 200–300 K is used to study the kinetics of the annihilation of charge carriers in Cu–Zn–Sn–Se powders obtained by the solid-phase method of synthesis in cells. The lifetime of excess electrons at room temperature is found to be shorter than 5 ns. The activation energy for the process of recombination amounted to Ea \textasciitilde{} 0.054 eV.",

author = "Novikov, \{G. F.\} and Gapanovich, \{M. V.\} and Gremenok, \{V. F.\} and Bocharov, \{K. V.\} and Tsai, \{W. T.\} and Jeng, \{Ming Jer\} and Chang, \{Liann Be\}",

note = "Publisher Copyright: {\textcopyright} 2017, Pleiades Publishing, Ltd.",

year = "2017",

month = jan,

day = "1",

doi = "10.1134/S1063782617010171",

language = "英语",

volume = "51",

pages = "18--22",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "1",

}

TY - JOUR

T1 - Lifetime of excess electrons in Cu–Zn–Sn–Se powders

AU - Novikov, G. F.

AU - Gapanovich, M. V.

AU - Gremenok, V. F.

AU - Bocharov, K. V.

AU - Tsai, W. T.

AU - Jeng, Ming Jer

AU - Chang, Liann Be

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The method of time-resolved microwave photoconductivity at a frequency of 36 GHz in the range of temperatures of 200–300 K is used to study the kinetics of the annihilation of charge carriers in Cu–Zn–Sn–Se powders obtained by the solid-phase method of synthesis in cells. The lifetime of excess electrons at room temperature is found to be shorter than 5 ns. The activation energy for the process of recombination amounted to Ea ~ 0.054 eV.

AB - The method of time-resolved microwave photoconductivity at a frequency of 36 GHz in the range of temperatures of 200–300 K is used to study the kinetics of the annihilation of charge carriers in Cu–Zn–Sn–Se powders obtained by the solid-phase method of synthesis in cells. The lifetime of excess electrons at room temperature is found to be shorter than 5 ns. The activation energy for the process of recombination amounted to Ea ~ 0.054 eV.

UR - https://www.scopus.com/pages/publications/85011933913

U2 - 10.1134/S1063782617010171

DO - 10.1134/S1063782617010171

M3 - 文章

AN - SCOPUS:85011933913

SN - 1063-7826

VL - 51

SP - 18

EP - 22

JO - Semiconductors

JF - Semiconductors

IS - 1

ER -

Lifetime of excess electrons in Cu–Zn–Sn–Se powders

Abstract

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