Light-immune pH sensor with SiC-based electrolyte-insulator-semiconductor structure

Yi Ting Lin, Chien Shiang Huang, Lee Chow, Jyun Ming Lan, Chia Ming Yang, Liann Be Chang, Chao Sung Lai

Research output: Contribution to journalJournal Article peer-review

8 Scopus citations

Abstract

An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity.

Original languageEnglish
Article number127002
JournalApplied Physics Express
Volume6
Issue number12
DOIs
StatePublished - 12 2013

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