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Light-Induced Dynamic Activation of Copper/Silicon Interface for Highly Selective Carbon Dioxide Reduction

  • Jiali Wang
  • , Tai Ying Lai
  • , Han Ting Lin
  • , Tsung Rong Kuo*
  • , Hsiao Chien Chen
  • , Chun Sheng Tseng
  • , Ching Wei Tung*
  • , Chia Ying Chien
  • , Hao Ming Chen*
  • *Corresponding author for this work
  • National Taiwan University
  • Taipei Medical University
  • Ming Chi University of Technology
  • National Synchrotron Radiation Research Center Taiwan

Research output: Contribution to journalJournal Article peer-review

15 Scopus citations

Abstract

Numerous studies have shown a fact that phase transformation and/or reconstruction are likely to occur and play crucial roles in electrochemical scenarios. Nevertheless, a decisive factor behind the diverse photoelectrochemical activity and selectivity of various copper/silicon photoelectrodes is still largely debated and missing in the community, especially the possibly dynamic behaviors of metal catalyst/semiconductor interface. Herein, through in situ X-ray absorption spectroscopy and transmission electron microscope, a model system of Cu nanocrystals with well-defined facets on black p-type silicon (BSi) is unprecedentedly demonstrated to reveal the dynamic phase transformation of forming irreversible silicide at Cu nanocrystal-BSi interface during photoelectrocatalysis, which is validated to originate from the atomic interdiffusion between Cu and Si driven by light-induced dynamic activation process. Significantly, the adaptive junction at Cu−Si interface is activated by an expansion of interatomic Cu−Cu distance for CO2 electroreduction, which efficiently restricts the C−C coupling pathway but strengthens the bonding with key intermediate of *CHO for CH4 yield, resulting in a remarkable 16-fold improvement in the product ratio of CH4/C2 products and an intriguing selectivity switch. This work offers new insights into dynamic structural transformations of metal/semiconductor junction and design of highly efficient catalysts toward photosynthesis.

Original languageEnglish
Article numbere202403333
Pages (from-to)e202403333
JournalAngewandte Chemie - International Edition
Volume63
Issue number33
DOIs
StatePublished - 12 08 2024

Bibliographical note

© 2024 Wiley-VCH GmbH.

Keywords

  • atomic interdiffusion
  • dynamic metal/semiconductor junction
  • photoelectrochemical CO reduction reaction
  • product profile
  • structural transformation

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