Light output improvement of InGaN-based light-emitting diodes by microchannel structure

Liann Be Chang; Yuan Hsiao Chang; Ming Jer Jeng

doi:10.1109/LPT.2007.901591

Light output improvement of InGaN-based light-emitting diodes by microchannel structure

Liann Be Chang^*
, Yuan Hsiao Chang
, Ming Jer Jeng

^*Corresponding author for this work

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

13 Scopus citations

Abstract

We propose a microchannel structure with deep holes to enhance the extraction efficiency of InGaN-based light-emitting diodes (LEDs). Two different depth microchannel LEDs are examined experimentally. One has air holes penetrated through the active layer and the other does not. It is found that the light extraction efficiency in the LED with the penetrated air holes is significantly larger than that in the LED without penetrating holes. The reason can be attributed to the microchannel waveguide behaviors. In comparison to the conventional LEDs, the light output power of our fabricated LEDs with and without penetrating holes improved by 43.5% and 5.1%, respectively.

Original language	English
Pages (from-to)	1175-1177
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	19
Issue number	15
DOIs	https://doi.org/10.1109/LPT.2007.901591
State	Published - 01 08 2007

Keywords

Extraction efficiency
Light output power
Light-emitting diodes (LEDs)
Microchannel structure

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10.1109/LPT.2007.901591

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title = "Light output improvement of InGaN-based light-emitting diodes by microchannel structure",

abstract = "We propose a microchannel structure with deep holes to enhance the extraction efficiency of InGaN-based light-emitting diodes (LEDs). Two different depth microchannel LEDs are examined experimentally. One has air holes penetrated through the active layer and the other does not. It is found that the light extraction efficiency in the LED with the penetrated air holes is significantly larger than that in the LED without penetrating holes. The reason can be attributed to the microchannel waveguide behaviors. In comparison to the conventional LEDs, the light output power of our fabricated LEDs with and without penetrating holes improved by 43.5\% and 5.1\%, respectively.",

keywords = "Extraction efficiency, Light output power, Light-emitting diodes (LEDs), Microchannel structure",

author = "Chang, \{Liann Be\} and Chang, \{Yuan Hsiao\} and Jeng, \{Ming Jer\}",

year = "2007",

month = aug,

day = "1",

doi = "10.1109/LPT.2007.901591",

language = "英语",

volume = "19",

pages = "1175--1177",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Light output improvement of InGaN-based light-emitting diodes by microchannel structure

AU - Chang, Liann Be

AU - Chang, Yuan Hsiao

AU - Jeng, Ming Jer

PY - 2007/8/1

Y1 - 2007/8/1

N2 - We propose a microchannel structure with deep holes to enhance the extraction efficiency of InGaN-based light-emitting diodes (LEDs). Two different depth microchannel LEDs are examined experimentally. One has air holes penetrated through the active layer and the other does not. It is found that the light extraction efficiency in the LED with the penetrated air holes is significantly larger than that in the LED without penetrating holes. The reason can be attributed to the microchannel waveguide behaviors. In comparison to the conventional LEDs, the light output power of our fabricated LEDs with and without penetrating holes improved by 43.5% and 5.1%, respectively.

AB - We propose a microchannel structure with deep holes to enhance the extraction efficiency of InGaN-based light-emitting diodes (LEDs). Two different depth microchannel LEDs are examined experimentally. One has air holes penetrated through the active layer and the other does not. It is found that the light extraction efficiency in the LED with the penetrated air holes is significantly larger than that in the LED without penetrating holes. The reason can be attributed to the microchannel waveguide behaviors. In comparison to the conventional LEDs, the light output power of our fabricated LEDs with and without penetrating holes improved by 43.5% and 5.1%, respectively.

KW - Extraction efficiency

KW - Light output power

KW - Light-emitting diodes (LEDs)

KW - Microchannel structure

UR - https://www.scopus.com/pages/publications/34547125339

U2 - 10.1109/LPT.2007.901591

DO - 10.1109/LPT.2007.901591

M3 - 文章

AN - SCOPUS:34547125339

SN - 1041-1135

VL - 19

SP - 1175

EP - 1177

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 15

ER -

Light output improvement of InGaN-based light-emitting diodes by microchannel structure

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Keywords

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