Linear GRINSCH 1.55-μm InGaAsPInP strained multiple quantum well laser diodes grown by substrate temperature control

Chih Wei Hu*, Feng Ming Lee, Kun Fu Huang, Chia Lung Tsai, Meng Chyi Wu, Yin Hsun Huang, Wen Jeng Ho

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

1 Scopus citations

Abstract

We demonstrated a novel method to grow InGaAsP linear graded-index separate confinement heterostructure (GRINSCH) (λ=1.05-1.24 μm) by ramping the growth temperature in the metallorganic chemical vapor deposition system. From secondary ion mass spectroscopy and photoluminescence analysis, the composition of linearly graded In1-x Gax Asy P1-y layer is well in control. By introducing this GRINSCH InGaAsP structure, 1.55-μm SMQW ridge waveguide laser diodes with a back-facet high-reflection coating exhibit a low threshold current of 6.5 mA at 20°C, a high light output power of 20 mW at 80 mA, and a high slope efficiency of 0.37 mWmA, also showing potential for high-temperature, continuous-wave operation up to 95°C. The longitudinal mode oscillates at 1.536 μm at 20°C and the 0.45-nm°C of red-shift rate in wavelength.

Original languageEnglish
Pages (from-to)G309-G313
JournalJournal of the Electrochemical Society
Volume153
Issue number4
DOIs
StatePublished - 04 2006
Externally publishedYes

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