Linearity optimizing on HBT power amplifier design

M. C. Tu; Y. C. Wang; H. Y. Ueng

doi:10.1016/j.mejo.2009.08.005

Linearity optimizing on HBT power amplifier design

M. C. Tu, Y. C. Wang, H. Y. Ueng^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

Highly linearized of HBT power amplifier (PA) was achieved for wireless digital mobile communication systems. This study investigates in detail the improvement of the linearity of HBT power amplifiers. The dependence of collector-base capacitance (C_bc) on bias is regarded initially as a trade-off between linearity and breakdown voltage. A simulation of device performed using SILVACO software reveals that at a capacitance ratio; C_bc (0/6 V) is 1.25 at a BV_ceo of 22 V. The device-level DC characteristic, load-pull power performance and power cell PAs are evaluated. A reasonably high PAE ~55% is attainable at 2.0 GHz and an adjacent channel leakage power ratio (ACPR) of over -48 dBc is achieved. The maximum achievable PAE is 54% with a maximum power density of 0.75 W/mm at 5.8 GHz. The novel HBT epitaxial structure, the layout of power cell design and the thick metal shunt process used to ensure the high linearity of the power cell are demonstrated.

Original language	English
Pages (from-to)	1714-1718
Number of pages	5
Journal	Microelectronics Journal
Volume	40
Issue number	12
DOIs	https://doi.org/10.1016/j.mejo.2009.08.005
State	Published - 12 2009
Externally published	Yes

Keywords

Adjacent channel power ratio
Collector-base capacitance
Epitaxial
HBT

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10.1016/j.mejo.2009.08.005

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title = "Linearity optimizing on HBT power amplifier design",

abstract = "Highly linearized of HBT power amplifier (PA) was achieved for wireless digital mobile communication systems. This study investigates in detail the improvement of the linearity of HBT power amplifiers. The dependence of collector-base capacitance (Cbc) on bias is regarded initially as a trade-off between linearity and breakdown voltage. A simulation of device performed using SILVACO software reveals that at a capacitance ratio; Cbc (0/6 V) is 1.25 at a BVceo of 22 V. The device-level DC characteristic, load-pull power performance and power cell PAs are evaluated. A reasonably high PAE ~55% is attainable at 2.0 GHz and an adjacent channel leakage power ratio (ACPR) of over -48 dBc is achieved. The maximum achievable PAE is 54% with a maximum power density of 0.75 W/mm at 5.8 GHz. The novel HBT epitaxial structure, the layout of power cell design and the thick metal shunt process used to ensure the high linearity of the power cell are demonstrated.",

keywords = "Adjacent channel power ratio, Collector-base capacitance, Epitaxial, HBT",

author = "Tu, {M. C.} and Wang, {Y. C.} and Ueng, {H. Y.}",

year = "2009",

month = dec,

doi = "10.1016/j.mejo.2009.08.005",

language = "英语",

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AU - Wang, Y. C.

AU - Ueng, H. Y.

PY - 2009/12

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N2 - Highly linearized of HBT power amplifier (PA) was achieved for wireless digital mobile communication systems. This study investigates in detail the improvement of the linearity of HBT power amplifiers. The dependence of collector-base capacitance (Cbc) on bias is regarded initially as a trade-off between linearity and breakdown voltage. A simulation of device performed using SILVACO software reveals that at a capacitance ratio; Cbc (0/6 V) is 1.25 at a BVceo of 22 V. The device-level DC characteristic, load-pull power performance and power cell PAs are evaluated. A reasonably high PAE ~55% is attainable at 2.0 GHz and an adjacent channel leakage power ratio (ACPR) of over -48 dBc is achieved. The maximum achievable PAE is 54% with a maximum power density of 0.75 W/mm at 5.8 GHz. The novel HBT epitaxial structure, the layout of power cell design and the thick metal shunt process used to ensure the high linearity of the power cell are demonstrated.

AB - Highly linearized of HBT power amplifier (PA) was achieved for wireless digital mobile communication systems. This study investigates in detail the improvement of the linearity of HBT power amplifiers. The dependence of collector-base capacitance (Cbc) on bias is regarded initially as a trade-off between linearity and breakdown voltage. A simulation of device performed using SILVACO software reveals that at a capacitance ratio; Cbc (0/6 V) is 1.25 at a BVceo of 22 V. The device-level DC characteristic, load-pull power performance and power cell PAs are evaluated. A reasonably high PAE ~55% is attainable at 2.0 GHz and an adjacent channel leakage power ratio (ACPR) of over -48 dBc is achieved. The maximum achievable PAE is 54% with a maximum power density of 0.75 W/mm at 5.8 GHz. The novel HBT epitaxial structure, the layout of power cell design and the thick metal shunt process used to ensure the high linearity of the power cell are demonstrated.

KW - Adjacent channel power ratio

KW - Collector-base capacitance

KW - Epitaxial

KW - HBT

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JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 12

ER -

Linearity optimizing on HBT power amplifier design

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Keywords

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