@inproceedings{56f2238bafb747a68caf80850eb9bfc5,
title = "Localization of NBT hot carrier-induced oxide damage in SOI pMOSFET's",
abstract = "The NBTI-like HC degradation of the SOI pMOSFET's was investigated. The generated Nit inside the channel region is the dominant mechanism of NBTI for SOI pMOSFET's due to the poor thermal conductivity of buried oxide. However, for the NBTI-like HC stressing, the generated Nit inside the drain and source region is dominant due to the combined HC and NBTI, respectively. The hole trapping model was proposed to explain both the electron and hole component increases during stressing and the activation energy has also been extracted. It was observed that NBTI-like stress was the worst case degradation in SOI pMOSFET's.",
author = "Lai, {Chao Sung} and Hung, {Shih Cheng} and Lee, {Jam Wem} and Chung, {Steve S.}",
year = "2005",
language = "英语",
isbn = "0780388038",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "710--711",
booktitle = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual",
note = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual ; Conference date: 17-04-2005 Through 21-04-2005",
}