Abstract
We have measured the dynamic response of the photocapacitance of a Schottky diode made of an undoped GaN epilayer grown by metalorganic vapor phase epitaxy. The measurements were performed after the suspension of a white light for a specified "waiting" time, t. The results indicate that the capacitance exhibits a logarithmic function of t from which a time constant of approximately 34.5 s and a cross-sectional area of less than 2.89 × 10-27 cm2 were retrieved. These are interpreted the characteristic time and the cross-sectional area of electron capture by the traps associated with dislocations formed in the epifilm, respectively.
Original language | English |
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Pages (from-to) | 5871-5874 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics |
Volume | 40 |
Issue number | 10 |
DOIs | |
State | Published - 10 2001 |
Externally published | Yes |
Keywords
- Decay
- Dislocations
- GaN
- Logarithmic
- MOVPE
- Photocapacitance