Long-term photocapacitance decay behavior in undoped GaN

H. M. Chung; Y. C. Pan; W. C. Chuang; N. C. Chen; C. C. Tsai; M. C. Lee; W. H. Chen; W. K. Chen

doi:10.1143/jjap.40.5871

Long-term photocapacitance decay behavior in undoped GaN

H. M. Chung^*, Y. C. Pan, W. C. Chuang, N. C. Chen, C. C. Tsai, M. C. Lee, W. H. Chen, W. K. Chen

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

5 Scopus citations

Abstract

We have measured the dynamic response of the photocapacitance of a Schottky diode made of an undoped GaN epilayer grown by metalorganic vapor phase epitaxy. The measurements were performed after the suspension of a white light for a specified "waiting" time, t. The results indicate that the capacitance exhibits a logarithmic function of t from which a time constant of approximately 34.5 s and a cross-sectional area of less than 2.89 × 10^-27 cm² were retrieved. These are interpreted the characteristic time and the cross-sectional area of electron capture by the traps associated with dislocations formed in the epifilm, respectively.

Original language	English
Pages (from-to)	5871-5874
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	40
Issue number	10
DOIs	https://doi.org/10.1143/jjap.40.5871
State	Published - 10 2001
Externally published	Yes

Keywords

Decay
Dislocations
GaN
Logarithmic
MOVPE
Photocapacitance

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10.1143/jjap.40.5871

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title = "Long-term photocapacitance decay behavior in undoped GaN",

abstract = "We have measured the dynamic response of the photocapacitance of a Schottky diode made of an undoped GaN epilayer grown by metalorganic vapor phase epitaxy. The measurements were performed after the suspension of a white light for a specified {"}waiting{"} time, t. The results indicate that the capacitance exhibits a logarithmic function of t from which a time constant of approximately 34.5 s and a cross-sectional area of less than 2.89 × 10-27 cm2 were retrieved. These are interpreted the characteristic time and the cross-sectional area of electron capture by the traps associated with dislocations formed in the epifilm, respectively.",

keywords = "Decay, Dislocations, GaN, Logarithmic, MOVPE, Photocapacitance",

author = "Chung, \{H. M.\} and Pan, \{Y. C.\} and Chuang, \{W. C.\} and Chen, \{N. C.\} and Tsai, \{C. C.\} and Lee, \{M. C.\} and Chen, \{W. H.\} and Chen, \{W. K.\}",

year = "2001",

month = oct,

doi = "10.1143/jjap.40.5871",

language = "英语",

volume = "40",

pages = "5871--5874",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

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TY - JOUR

T1 - Long-term photocapacitance decay behavior in undoped GaN

AU - Chung, H. M.

AU - Pan, Y. C.

AU - Chuang, W. C.

AU - Chen, N. C.

AU - Tsai, C. C.

AU - Lee, M. C.

AU - Chen, W. H.

AU - Chen, W. K.

PY - 2001/10

Y1 - 2001/10

N2 - We have measured the dynamic response of the photocapacitance of a Schottky diode made of an undoped GaN epilayer grown by metalorganic vapor phase epitaxy. The measurements were performed after the suspension of a white light for a specified "waiting" time, t. The results indicate that the capacitance exhibits a logarithmic function of t from which a time constant of approximately 34.5 s and a cross-sectional area of less than 2.89 × 10-27 cm2 were retrieved. These are interpreted the characteristic time and the cross-sectional area of electron capture by the traps associated with dislocations formed in the epifilm, respectively.

AB - We have measured the dynamic response of the photocapacitance of a Schottky diode made of an undoped GaN epilayer grown by metalorganic vapor phase epitaxy. The measurements were performed after the suspension of a white light for a specified "waiting" time, t. The results indicate that the capacitance exhibits a logarithmic function of t from which a time constant of approximately 34.5 s and a cross-sectional area of less than 2.89 × 10-27 cm2 were retrieved. These are interpreted the characteristic time and the cross-sectional area of electron capture by the traps associated with dislocations formed in the epifilm, respectively.

KW - Decay

KW - Dislocations

KW - GaN

KW - Logarithmic

KW - MOVPE

KW - Photocapacitance

UR - https://www.scopus.com/pages/publications/0035485144

U2 - 10.1143/jjap.40.5871

DO - 10.1143/jjap.40.5871

M3 - 文章

AN - SCOPUS:0035485144

SN - 0021-4922

VL - 40

SP - 5871

EP - 5874

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10

ER -

Long-term photocapacitance decay behavior in undoped GaN

Abstract

Keywords

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