Abstract
Due to the stress-induced polarization effect on the GaN HEMTs, the surface passivation of the device is critical and is deserved to conduct a detailed study. It has been proven that the GaN HEMTs demonstrate nondispersive pulsed current-voltage (I-V) characteristics and better microwave power performances after passivating the Si3N 4 film on the GaN surface. In this letter, we proposed to use the BCB material, a negative photoresist with a low-κ characteristic, as the surface passivation layer on GaN HEMTs fabrication. After comparing the dc I-V, pulsed I-V, RF small-signal, microwave power characteristics, and device reliability, this BCB-passivated GaN HEMT achieved better performance than the Si 3N4 passivated device.
Original language | English |
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Pages (from-to) | 763-765 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 25 |
Issue number | 12 |
DOIs | |
State | Published - 12 2004 |
Externally published | Yes |
Keywords
- Benzocyclobutene (BCB) passivation
- GaN HEMT
- Reliability