Low-Cost CuIn 1-x Ga x Se 2 ultra-thin hole-transporting material layer for perovskite/CIGSe heterojunction solar cells

Liann Be Chang, Chzu Chiang Tseng, Gwomei Wu*, Wu Shiung Feng, Ming Jer Jeng, Lung Chien Chen, Kuan Lin Lee, Ewa Popko, Lucjan Jacak, Katarzyna Gwozdz

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

7 Scopus citations

Abstract

This paper presents a new type of solar cellwith enhanced optical-current characteristics using an ultra-thin CuIn 1-x Ga x Se 2 hole-transporting material (HTM) layer (< 400 nm). The HTM layer was between a bi-layer Mo metal-electrode and a CH 3 NH 3 PbI 3 (MAPbI 3 ) perovskite active absorbing material. It promoted carrier transportand led to an improved device with good ohmic-contacts. The solar cell was prepared as a bi-layer Mo/CuIn 1-x Ga x Se 2 /perovskite/C60/Ag multilayer of nano-structures on an FTO (fluorine-doped tin oxide) glass substrate. The ultra-thin CuIn 1-x Ga x Se 2 HTM layers were annealed at various temperatures of 400, 500, and 600 °C. Scanning electron microscopy studies revealed that the nano-crystal grain size of CuIn 1-x Ga x Se 2 increased with the annealing temperature. The solar cell results show an improved optical power conversion efficiency at ~14.2%. The application of the CuIn 1-x Ga x Se 2 layer with the perovskite absorbing material could be used for designing solar cells with a reduced HTM thickness. The CuIn 1-x Ga x Se 2 HTM has been evidenced to maintain a properopen circuit voltage, short-circuit current density and photovoltaic stability.

Original languageEnglish
Article number719
JournalApplied Sciences (Switzerland)
Volume9
Issue number4
DOIs
StatePublished - 19 02 2019

Bibliographical note

Publisher Copyright:
© 2019 by the authors.

Keywords

  • C
  • CIGSe
  • Hole-transporting material (HTM)
  • MoSe
  • Perovskite

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