Abstract
This paper presents a new type of solar cellwith enhanced optical-current characteristics using an ultra-thin CuIn 1-x Ga x Se 2 hole-transporting material (HTM) layer (< 400 nm). The HTM layer was between a bi-layer Mo metal-electrode and a CH 3 NH 3 PbI 3 (MAPbI 3 ) perovskite active absorbing material. It promoted carrier transportand led to an improved device with good ohmic-contacts. The solar cell was prepared as a bi-layer Mo/CuIn 1-x Ga x Se 2 /perovskite/C60/Ag multilayer of nano-structures on an FTO (fluorine-doped tin oxide) glass substrate. The ultra-thin CuIn 1-x Ga x Se 2 HTM layers were annealed at various temperatures of 400, 500, and 600 °C. Scanning electron microscopy studies revealed that the nano-crystal grain size of CuIn 1-x Ga x Se 2 increased with the annealing temperature. The solar cell results show an improved optical power conversion efficiency at ~14.2%. The application of the CuIn 1-x Ga x Se 2 layer with the perovskite absorbing material could be used for designing solar cells with a reduced HTM thickness. The CuIn 1-x Ga x Se 2 HTM has been evidenced to maintain a properopen circuit voltage, short-circuit current density and photovoltaic stability.
Original language | English |
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Article number | 719 |
Journal | Applied Sciences (Switzerland) |
Volume | 9 |
Issue number | 4 |
DOIs | |
State | Published - 19 02 2019 |
Bibliographical note
Publisher Copyright:© 2019 by the authors.
Keywords
- C
- CIGSe
- Hole-transporting material (HTM)
- MoSe
- Perovskite