Low current (5 pA) resistive switching memory using high-κ Ta 2O5 solid electrolyte

S. Maikap; S. Z. Rahaman; T. Y. Wu; F. Chen; M. J. Kao; M. J. Tsai

doi:10.1109/ESSDERC.2009.5331517

Low current (5 pA) resistive switching memory using high-κ Ta ₂O₅ solid electrolyte

S. Maikap^*, S. Z. Rahaman, T. Y. Wu, F. Chen, M. J. Kao, M. J. Tsai

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

Bipolar resistive switching memory device using high-κ Ta ₂O₅ solid electrolyte in a Cu/Ta₂O ₅/W structure with the device sizes from 0.2-8μm was investigated. This resistive memory device has a high threshold voltage of 0.75V, high resistance ratio (R_High/R_Low) of 3×I0³, good endurance of > 10³, and excellent retention at 150°C. The memory device with a low current operation of 5 pA is obtained, for the first time, owing to the Cu metallic chain formation in the high-κ Ta ₂O₅ solid electrolyte. The strong Cu chain formation is also confirmed by monitoring both the negative voltage and current observations. The low resistance state (R_Low) decreases with increasing the current compliance from 5pA to 700μA, which can be useful for future multi-level data storage applications.

Original language	English
Title of host publication	ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
Pages	217-220
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2009.5331517
State	Published - 2009
Event	39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece Duration: 14 09 2009 → 18 09 2009

Publication series

Name	ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Conference

Conference	39th European Solid-State Device Research Conference, ESSDERC 2009
Country/Territory	Greece
City	Athens
Period	14/09/09 → 18/09/09

Access to Document

10.1109/ESSDERC.2009.5331517

Cite this

Maikap, S., Rahaman, S. Z., Wu, T. Y., Chen, F., Kao, M. J., & Tsai, M. J. (2009). Low current (5 pA) resistive switching memory using high-κ Ta ₂O₅ solid electrolyte. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference (pp. 217-220). Article 5331517 (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2009.5331517

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title = "Low current (5 pA) resistive switching memory using high-κ Ta 2O5 solid electrolyte",

abstract = "Bipolar resistive switching memory device using high-κ Ta 2O5 solid electrolyte in a Cu/Ta2O 5/W structure with the device sizes from 0.2-8μm was investigated. This resistive memory device has a high threshold voltage of 0.75V, high resistance ratio (RHigh/RLow) of 3×I03, good endurance of > 103, and excellent retention at 150°C. The memory device with a low current operation of 5 pA is obtained, for the first time, owing to the Cu metallic chain formation in the high-κ Ta 2O5 solid electrolyte. The strong Cu chain formation is also confirmed by monitoring both the negative voltage and current observations. The low resistance state (RLow) decreases with increasing the current compliance from 5pA to 700μA, which can be useful for future multi-level data storage applications.",

author = "S. Maikap and Rahaman, {S. Z.} and Wu, {T. Y.} and F. Chen and Kao, {M. J.} and Tsai, {M. J.}",

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Maikap, S, Rahaman, SZ, Wu, TY, Chen, F, Kao, MJ & Tsai, MJ 2009, Low current (5 pA) resistive switching memory using high-κ Ta ₂O₅ solid electrolyte. in ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference., 5331517, ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference, pp. 217-220, 39th European Solid-State Device Research Conference, ESSDERC 2009, Athens, Greece, 14/09/09. https://doi.org/10.1109/ESSDERC.2009.5331517

Low current (5 pA) resistive switching memory using high-κ Ta ₂O₅ solid electrolyte. / Maikap, S.; Rahaman, S. Z.; Wu, T. Y. et al.
ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 217-220 5331517 (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - Bipolar resistive switching memory device using high-κ Ta 2O5 solid electrolyte in a Cu/Ta2O 5/W structure with the device sizes from 0.2-8μm was investigated. This resistive memory device has a high threshold voltage of 0.75V, high resistance ratio (RHigh/RLow) of 3×I03, good endurance of > 103, and excellent retention at 150°C. The memory device with a low current operation of 5 pA is obtained, for the first time, owing to the Cu metallic chain formation in the high-κ Ta 2O5 solid electrolyte. The strong Cu chain formation is also confirmed by monitoring both the negative voltage and current observations. The low resistance state (RLow) decreases with increasing the current compliance from 5pA to 700μA, which can be useful for future multi-level data storage applications.

AB - Bipolar resistive switching memory device using high-κ Ta 2O5 solid electrolyte in a Cu/Ta2O 5/W structure with the device sizes from 0.2-8μm was investigated. This resistive memory device has a high threshold voltage of 0.75V, high resistance ratio (RHigh/RLow) of 3×I03, good endurance of > 103, and excellent retention at 150°C. The memory device with a low current operation of 5 pA is obtained, for the first time, owing to the Cu metallic chain formation in the high-κ Ta 2O5 solid electrolyte. The strong Cu chain formation is also confirmed by monitoring both the negative voltage and current observations. The low resistance state (RLow) decreases with increasing the current compliance from 5pA to 700μA, which can be useful for future multi-level data storage applications.

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Maikap S, Rahaman SZ, Wu TY, Chen F, Kao MJ, Tsai MJ. Low current (5 pA) resistive switching memory using high-κ Ta ₂O₅ solid electrolyte. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 217-220. 5331517. (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2009.5331517