Low current bipolar resistive switching memory using CU metallic filament in Ge0.2Se0.8 solid-electrolyte

S. Z. Rahaman; S. Maikap; C. H. Lin; P. J. Tzeng; H. Y. Lee; T. Y. Wu; Y. S. Chen; F. Chen; M. J. Kao; M. J. Tsai

doi:10.1109/VTSA.2010.5488915

Low current bipolar resistive switching memory using CU metallic filament in Ge_0.2Se_0.8 solid-electrolyte

S. Z. Rahaman
, S. Maikap
, C. H. Lin
, P. J. Tzeng
, H. Y. Lee
, T. Y. Wu
, Y. S. Chen
, F. Chen
, M. J. Kao
, M. J. Tsai

Department of Electronic Engineering

Chang Gung University
Industrial Technology Research Institute of Taiwan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Low current/voltage (1 nA/1.3V) operation of resistive switching memory device using Cu metallic filament in Ge_0.2Se_0.8 solid-electrolyte has been investigated. This resistive memory device have a large resistance ratio of > 10 at 1 nA current compliance, good endurance of ∼10⁵ cycles, and good data retention with a current of 1 nA up to 2×10³ seconds. The low resistance state decreases with increasing the programming current from 1 nA to 500 μA, which can be useful for future nanoscale MLC applications. A strong Cu metallic filament is investigated by monitoring the negative erase current (I_e).

Original language	English
Title of host publication	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Pages	134-135
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2010.5488915
State	Published - 2010
Event	2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan Duration: 26 04 2010 → 28 04 2010

Publication series

Name	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Conference

Conference	2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Country/Territory	Taiwan
City	Hsin Chu
Period	26/04/10 → 28/04/10

Access to Document

10.1109/VTSA.2010.5488915

Cite this

Rahaman, S. Z., Maikap, S., Lin, C. H., Tzeng, P. J., Lee, H. Y., Wu, T. Y., Chen, Y. S., Chen, F., Kao, M. J., & Tsai, M. J. (2010). Low current bipolar resistive switching memory using CU metallic filament in Ge_0.2Se_0.8 solid-electrolyte. In Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 (pp. 134-135). Article 5488915 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). https://doi.org/10.1109/VTSA.2010.5488915

Rahaman, S. Z. ; Maikap, S. ; Lin, C. H. et al. / Low current bipolar resistive switching memory using CU metallic filament in Ge_0.2Se_0.8 solid-electrolyte. Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. pp. 134-135 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

@inproceedings{d0ca5be5c5f44398a0168222e63811d4,

title = "Low current bipolar resistive switching memory using CU metallic filament in Ge0.2Se0.8 solid-electrolyte",

abstract = "Low current/voltage (1 nA/1.3V) operation of resistive switching memory device using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte has been investigated. This resistive memory device have a large resistance ratio of > 10 at 1 nA current compliance, good endurance of ∼105 cycles, and good data retention with a current of 1 nA up to 2{\texttimes}103 seconds. The low resistance state decreases with increasing the programming current from 1 nA to 500 μA, which can be useful for future nanoscale MLC applications. A strong Cu metallic filament is investigated by monitoring the negative erase current (Ie).",

author = "Rahaman, \{S. Z.\} and S. Maikap and Lin, \{C. H.\} and Tzeng, \{P. J.\} and Lee, \{H. Y.\} and Wu, \{T. Y.\} and Chen, \{Y. S.\} and F. Chen and Kao, \{M. J.\} and Tsai, \{M. J.\}",

year = "2010",

doi = "10.1109/VTSA.2010.5488915",

language = "英语",

isbn = "9781424450633",

series = "Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010",

pages = "134--135",

booktitle = "Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010",

note = "2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 ; Conference date: 26-04-2010 Through 28-04-2010",

}

Rahaman, SZ, Maikap, S, Lin, CH, Tzeng, PJ, Lee, HY, Wu, TY, Chen, YS, Chen, F, Kao, MJ & Tsai, MJ 2010, Low current bipolar resistive switching memory using CU metallic filament in Ge_0.2Se_0.8 solid-electrolyte. in Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010., 5488915, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010, pp. 134-135, 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010, Hsin Chu, Taiwan, 26/04/10. https://doi.org/10.1109/VTSA.2010.5488915

Low current bipolar resistive switching memory using CU metallic filament in Ge_0.2Se_0.8 solid-electrolyte. / Rahaman, S. Z.; Maikap, S.; Lin, C. H. et al.
Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. p. 134-135 5488915 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Rahaman, S. Z.

AU - Maikap, S.

AU - Lin, C. H.

AU - Tzeng, P. J.

AU - Lee, H. Y.

AU - Wu, T. Y.

AU - Chen, Y. S.

AU - Chen, F.

AU - Kao, M. J.

AU - Tsai, M. J.

PY - 2010

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N2 - Low current/voltage (1 nA/1.3V) operation of resistive switching memory device using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte has been investigated. This resistive memory device have a large resistance ratio of > 10 at 1 nA current compliance, good endurance of ∼105 cycles, and good data retention with a current of 1 nA up to 2×103 seconds. The low resistance state decreases with increasing the programming current from 1 nA to 500 μA, which can be useful for future nanoscale MLC applications. A strong Cu metallic filament is investigated by monitoring the negative erase current (Ie).

AB - Low current/voltage (1 nA/1.3V) operation of resistive switching memory device using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte has been investigated. This resistive memory device have a large resistance ratio of > 10 at 1 nA current compliance, good endurance of ∼105 cycles, and good data retention with a current of 1 nA up to 2×103 seconds. The low resistance state decreases with increasing the programming current from 1 nA to 500 μA, which can be useful for future nanoscale MLC applications. A strong Cu metallic filament is investigated by monitoring the negative erase current (Ie).

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DO - 10.1109/VTSA.2010.5488915

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T3 - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

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BT - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

T2 - 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Y2 - 26 April 2010 through 28 April 2010

ER -

Rahaman SZ, Maikap S, Lin CH, Tzeng PJ, Lee HY, Wu TY et al. Low current bipolar resistive switching memory using CU metallic filament in Ge_0.2Se_0.8 solid-electrolyte. In Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. p. 134-135. 5488915. (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). doi: 10.1109/VTSA.2010.5488915