Low frequency noise analysis of top-gate MgZnO thin-film transistor with High- ZrO2 gate insulator

Hsien Chin Chiu; Hsiang Chun Wang; Che Kai Lin; Chau Wei Chiu; Jeffrey S. Fu; Kuang Po Hsueh; Feng Tso Chien

doi:10.1149/1.3606545

Low frequency noise analysis of top-gate MgZnO thin-film transistor with High- ZrO₂ gate insulator

Hsien Chin Chiu^*, Hsiang Chun Wang, Che Kai Lin, Chau Wei Chiu, Jeffrey S. Fu, Kuang Po Hsueh, Feng Tso Chien

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

In this work, depletion-mode magnesium doped zinc-oxide (MgZnO) channel thin film transistors (TFTs) with zirconium oxide (ZrO₂) gate insulator were fabricated using radio frequency magnetron sputtering deposition. Sputtered MgZnO TFT channel layer performed an average transmittance of 90 and an improved energy bandgap of 5.02 eV after 700C post annealing. X-ray photoelectron spectroscopy (XPS) results indicated that the binding energy of Zn-O bonds and Mg-O bonds were enhanced following with the increasing of the post annealing temperatures. The low frequency noise spectra also indicated that the ZrO₂/MgZnO was dominated by flicker noise and gate leakage induced noise was suppressed.

Original language	English
Pages (from-to)	H385-H388
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	9
DOIs	https://doi.org/10.1149/1.3606545
State	Published - 2011

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title = "Low frequency noise analysis of top-gate MgZnO thin-film transistor with High- ZrO2 gate insulator",

abstract = "In this work, depletion-mode magnesium doped zinc-oxide (MgZnO) channel thin film transistors (TFTs) with zirconium oxide (ZrO2) gate insulator were fabricated using radio frequency magnetron sputtering deposition. Sputtered MgZnO TFT channel layer performed an average transmittance of 90 and an improved energy bandgap of 5.02 eV after 700C post annealing. X-ray photoelectron spectroscopy (XPS) results indicated that the binding energy of Zn-O bonds and Mg-O bonds were enhanced following with the increasing of the post annealing temperatures. The low frequency noise spectra also indicated that the ZrO2/MgZnO was dominated by flicker noise and gate leakage induced noise was suppressed.",

author = "Chiu, \{Hsien Chin\} and Wang, \{Hsiang Chun\} and Lin, \{Che Kai\} and Chiu, \{Chau Wei\} and Fu, \{Jeffrey S.\} and Hsueh, \{Kuang Po\} and Chien, \{Feng Tso\}",

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doi = "10.1149/1.3606545",

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T1 - Low frequency noise analysis of top-gate MgZnO thin-film transistor with High- ZrO2 gate insulator

AU - Chiu, Hsien Chin

AU - Wang, Hsiang Chun

AU - Lin, Che Kai

AU - Chiu, Chau Wei

AU - Fu, Jeffrey S.

AU - Hsueh, Kuang Po

AU - Chien, Feng Tso

PY - 2011

Y1 - 2011

N2 - In this work, depletion-mode magnesium doped zinc-oxide (MgZnO) channel thin film transistors (TFTs) with zirconium oxide (ZrO2) gate insulator were fabricated using radio frequency magnetron sputtering deposition. Sputtered MgZnO TFT channel layer performed an average transmittance of 90 and an improved energy bandgap of 5.02 eV after 700C post annealing. X-ray photoelectron spectroscopy (XPS) results indicated that the binding energy of Zn-O bonds and Mg-O bonds were enhanced following with the increasing of the post annealing temperatures. The low frequency noise spectra also indicated that the ZrO2/MgZnO was dominated by flicker noise and gate leakage induced noise was suppressed.

AB - In this work, depletion-mode magnesium doped zinc-oxide (MgZnO) channel thin film transistors (TFTs) with zirconium oxide (ZrO2) gate insulator were fabricated using radio frequency magnetron sputtering deposition. Sputtered MgZnO TFT channel layer performed an average transmittance of 90 and an improved energy bandgap of 5.02 eV after 700C post annealing. X-ray photoelectron spectroscopy (XPS) results indicated that the binding energy of Zn-O bonds and Mg-O bonds were enhanced following with the increasing of the post annealing temperatures. The low frequency noise spectra also indicated that the ZrO2/MgZnO was dominated by flicker noise and gate leakage induced noise was suppressed.

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DO - 10.1149/1.3606545

M3 - 文章

AN - SCOPUS:79960203876

SN - 1099-0062

VL - 14

SP - H385-H388

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 9

ER -

Low frequency noise analysis of top-gate MgZnO thin-film transistor with High- ZrO₂ gate insulator

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