Low insertion loss switch technology using 6-inch InGaP/AlGaAs/InGaAs pHEMT production process

H. C. Chiu; T. J. Yeh; Y. Y. Hsieh; Tony Hwang; Paul Yeh; C. S. Wu

doi:10.1109/CSICS.2004.1392508

Low insertion loss switch technology using 6-inch InGaP/AlGaAs/InGaAs pHEMT production process

H. C. Chiu^*, T. J. Yeh, Y. Y. Hsieh, Tony Hwang, Paul Yeh, C. S. Wu

^*Corresponding author for this work

Department of Electronic Engineering

WIN Semiconductors Corp.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

A high yield low insertion loss switch (LIL switch) for GSM and WLAN applications was demonstrated by using 0.5 μm gate length InGaP/AlGaAs/ InGaAs pHEMT technology. In order to improve the chip yield during gate recess process, the high-selectivity InGaP Schottky layer design was applied in this study. Besides, ordering type InGaP Schottky layer also provides an extreme lower ΔE_c (<0.1eV) as compared with AlGaAs ones and this character is helpful to improve contact resistance and insertion loss performance of switch. The fabricated LIL switch IC achieved a low insertion loss of 0.18 dB under a 0.9 GHz operation. In addition, the output power density of this proposed InGaP/AlGaAs/InGaAs pHEMT has demonstrated 284mW/mm under V_ds of 3V at 2GHz operation. Therefore, this 6-inch production pHEMT switch process exhibited a high potential in LIL switch and PA MMIC design for GSM and WLAN applications.

Original language	English
Title of host publication	IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary
Subtitle of host publication	Compounding Your Chips in Monterey - Technical Digest 2004
Pages	119-122
Number of pages	4
DOIs	https://doi.org/10.1109/CSICS.2004.1392508
State	Published - 2004
Event	IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium - Monterey, CA, United States Duration: 24 10 2004 → 27 10 2004

Publication series

Name	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)	1550-8781

Conference

Conference	IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium
Country/Territory	United States
City	Monterey, CA
Period	24/10/04 → 27/10/04

Keywords

InGaP
Power
Switch
pHEMT

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10.1109/CSICS.2004.1392508

Cite this

Chiu, H. C., Yeh, T. J., Hsieh, Y. Y., Hwang, T., Yeh, P., & Wu, C. S. (2004). Low insertion loss switch technology using 6-inch InGaP/AlGaAs/InGaAs pHEMT production process. In IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary: Compounding Your Chips in Monterey - Technical Digest 2004 (pp. 119-122). (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). https://doi.org/10.1109/CSICS.2004.1392508

Chiu, H. C. ; Yeh, T. J. ; Hsieh, Y. Y. et al. / Low insertion loss switch technology using 6-inch InGaP/AlGaAs/InGaAs pHEMT production process. IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary: Compounding Your Chips in Monterey - Technical Digest 2004. 2004. pp. 119-122 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

@inproceedings{d5e07bbbcdb94c90a86d0c5310d5b987,

title = "Low insertion loss switch technology using 6-inch InGaP/AlGaAs/InGaAs pHEMT production process",

abstract = "A high yield low insertion loss switch (LIL switch) for GSM and WLAN applications was demonstrated by using 0.5 μm gate length InGaP/AlGaAs/ InGaAs pHEMT technology. In order to improve the chip yield during gate recess process, the high-selectivity InGaP Schottky layer design was applied in this study. Besides, ordering type InGaP Schottky layer also provides an extreme lower ΔEc (<0.1eV) as compared with AlGaAs ones and this character is helpful to improve contact resistance and insertion loss performance of switch. The fabricated LIL switch IC achieved a low insertion loss of 0.18 dB under a 0.9 GHz operation. In addition, the output power density of this proposed InGaP/AlGaAs/InGaAs pHEMT has demonstrated 284mW/mm under Vds of 3V at 2GHz operation. Therefore, this 6-inch production pHEMT switch process exhibited a high potential in LIL switch and PA MMIC design for GSM and WLAN applications.",

keywords = "InGaP, Power, Switch, pHEMT",

author = "Chiu, {H. C.} and Yeh, {T. J.} and Hsieh, {Y. Y.} and Tony Hwang and Paul Yeh and Wu, {C. S.}",

year = "2004",

doi = "10.1109/CSICS.2004.1392508",

language = "英语",

isbn = "0780386167",

series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",

pages = "119--122",

booktitle = "IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary",

note = "IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium ; Conference date: 24-10-2004 Through 27-10-2004",

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Chiu, HC, Yeh, TJ, Hsieh, YY, Hwang, T, Yeh, P & Wu, CS 2004, Low insertion loss switch technology using 6-inch InGaP/AlGaAs/InGaAs pHEMT production process. in IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary: Compounding Your Chips in Monterey - Technical Digest 2004. Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, pp. 119-122, IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, Monterey, CA, United States, 24/10/04. https://doi.org/10.1109/CSICS.2004.1392508

Low insertion loss switch technology using 6-inch InGaP/AlGaAs/InGaAs pHEMT production process. / Chiu, H. C.; Yeh, T. J.; Hsieh, Y. Y. et al.
IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary: Compounding Your Chips in Monterey - Technical Digest 2004. 2004. p. 119-122 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low insertion loss switch technology using 6-inch InGaP/AlGaAs/InGaAs pHEMT production process

AU - Chiu, H. C.

AU - Yeh, T. J.

AU - Hsieh, Y. Y.

AU - Hwang, Tony

AU - Yeh, Paul

AU - Wu, C. S.

PY - 2004

Y1 - 2004

N2 - A high yield low insertion loss switch (LIL switch) for GSM and WLAN applications was demonstrated by using 0.5 μm gate length InGaP/AlGaAs/ InGaAs pHEMT technology. In order to improve the chip yield during gate recess process, the high-selectivity InGaP Schottky layer design was applied in this study. Besides, ordering type InGaP Schottky layer also provides an extreme lower ΔEc (<0.1eV) as compared with AlGaAs ones and this character is helpful to improve contact resistance and insertion loss performance of switch. The fabricated LIL switch IC achieved a low insertion loss of 0.18 dB under a 0.9 GHz operation. In addition, the output power density of this proposed InGaP/AlGaAs/InGaAs pHEMT has demonstrated 284mW/mm under Vds of 3V at 2GHz operation. Therefore, this 6-inch production pHEMT switch process exhibited a high potential in LIL switch and PA MMIC design for GSM and WLAN applications.

AB - A high yield low insertion loss switch (LIL switch) for GSM and WLAN applications was demonstrated by using 0.5 μm gate length InGaP/AlGaAs/ InGaAs pHEMT technology. In order to improve the chip yield during gate recess process, the high-selectivity InGaP Schottky layer design was applied in this study. Besides, ordering type InGaP Schottky layer also provides an extreme lower ΔEc (<0.1eV) as compared with AlGaAs ones and this character is helpful to improve contact resistance and insertion loss performance of switch. The fabricated LIL switch IC achieved a low insertion loss of 0.18 dB under a 0.9 GHz operation. In addition, the output power density of this proposed InGaP/AlGaAs/InGaAs pHEMT has demonstrated 284mW/mm under Vds of 3V at 2GHz operation. Therefore, this 6-inch production pHEMT switch process exhibited a high potential in LIL switch and PA MMIC design for GSM and WLAN applications.

KW - InGaP

KW - Power

KW - Switch

KW - pHEMT

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U2 - 10.1109/CSICS.2004.1392508

DO - 10.1109/CSICS.2004.1392508

M3 - 会议稿件

AN - SCOPUS:21644470633

SN - 0780386167

T3 - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

SP - 119

EP - 122

BT - IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary

T2 - IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium

Y2 - 24 October 2004 through 27 October 2004

ER -

Chiu HC, Yeh TJ, Hsieh YY, Hwang T, Yeh P, Wu CS. Low insertion loss switch technology using 6-inch InGaP/AlGaAs/InGaAs pHEMT production process. In IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary: Compounding Your Chips in Monterey - Technical Digest 2004. 2004. p. 119-122. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). doi: 10.1109/CSICS.2004.1392508

Low insertion loss switch technology using 6-inch InGaP/AlGaAs/InGaAs pHEMT production process

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