Low-k BCB passivated Al0.5Ga0.5As/In0.15Ga0.85As enhancement-mode pHMETs

H. C. Chiu*, S. C. Yang, Y. J. Chan

*Corresponding author for this work

Research output: Contribution to conferenceConference Paperpeer-review

3 Scopus citations

Abstract

A high power-added efficiency Al0.5Ga0.5As/InGaAs enhancement-mode pHEMTs with benzocyclobutene (BCB) passivated layer are fabricated and characterized. This passivation technology takes advantages of the low dielectric permittivity (2.7) and a low loss tangent (0.0008), which simplifies the passivation process for microwave power device. In this work, we not only suppress the drain-source breakdown voltage but also improve the device power performance under a high input power swing by using a BCB passivation layer. The passivated 1.0 μm-long gate pHEMTs exhibit a higher off-state performance than unpassivated ones. The maximum output power under a 2.4 GHz operation is 118 mW/mm, with a linear power gain of 11.1 dB, and a power-added efficiency of 60 %. These characteristics demonstrate a great potential for BCB passivated E-mode pHEMTs on the large-signal microwave power device applications.

Original languageEnglish
Pages269-272
Number of pages4
StatePublished - 2001
Externally publishedYes
Event23rd Annual GaAs IC Symposium 2001 - Baltimore, MD, United States
Duration: 21 10 200124 10 2001

Conference

Conference23rd Annual GaAs IC Symposium 2001
Country/TerritoryUnited States
CityBaltimore, MD
Period21/10/0124/10/01

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