Low noise and high gain RF MOSFETs on plastic substrates

H. L. Kao; Albert Chin; C. C. Huang; B. F. Hung; K. C. Chiang; Z. M. Lai; S. P. McAlister; C. C. Chi

doi:10.1109/MWSYM.2005.1516584

Low noise and high gain RF MOSFETs on plastic substrates

H. L. Kao^*, Albert Chin, C. C. Huang, B. F. Hung, K. C. Chiang, Z. M. Lai, S. P. McAlister, C. C. Chi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

A low minimum noise figure (NF _min) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 μm RF MOSFETs on plastic, made by substrate thinning (∼30 μm), transfer and bonding. The performance can be further improved to 0.96 dB NF _min and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.

Original language	English
Title of host publication	2005 IEEE MTT-S International Microwave Symposium Digest
Pages	295-298
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2005.1516584
State	Published - 2005
Externally published	Yes
Event	2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States Duration: 12 06 2005 → 17 06 2005

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2005
ISSN (Print)	0149-645X

Conference

Conference	2005 IEEE MTT-S International Microwave Symposium
Country/Territory	United States
City	Long Beach, CA
Period	12/06/05 → 17/06/05

Keywords

Associated gain
MOSFET
Plastic
RF Noise

Access to Document

10.1109/MWSYM.2005.1516584

Cite this

Kao, H. L., Chin, A., Huang, C. C., Hung, B. F., Chiang, K. C., Lai, Z. M., McAlister, S. P., & Chi, C. C. (2005). Low noise and high gain RF MOSFETs on plastic substrates. In 2005 IEEE MTT-S International Microwave Symposium Digest (pp. 295-298). Article 1516584 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2005). https://doi.org/10.1109/MWSYM.2005.1516584

@inproceedings{7fdc95c895f3434caf0d7fe9e373b185,

title = "Low noise and high gain RF MOSFETs on plastic substrates",

abstract = "A low minimum noise figure (NF min) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 μm RF MOSFETs on plastic, made by substrate thinning (∼30 μm), transfer and bonding. The performance can be further improved to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.",

keywords = "Associated gain, MOSFET, Plastic, RF Noise",

author = "Kao, {H. L.} and Albert Chin and Huang, {C. C.} and Hung, {B. F.} and Chiang, {K. C.} and Lai, {Z. M.} and McAlister, {S. P.} and Chi, {C. C.}",

year = "2005",

doi = "10.1109/MWSYM.2005.1516584",

language = "英语",

isbn = "0780388461",

series = "IEEE MTT-S International Microwave Symposium Digest",

pages = "295--298",

booktitle = "2005 IEEE MTT-S International Microwave Symposium Digest",

note = "2005 IEEE MTT-S International Microwave Symposium ; Conference date: 12-06-2005 Through 17-06-2005",

}

Kao, HL, Chin, A, Huang, CC, Hung, BF, Chiang, KC, Lai, ZM, McAlister, SP & Chi, CC 2005, Low noise and high gain RF MOSFETs on plastic substrates. in 2005 IEEE MTT-S International Microwave Symposium Digest., 1516584, IEEE MTT-S International Microwave Symposium Digest, vol. 2005, pp. 295-298, 2005 IEEE MTT-S International Microwave Symposium, Long Beach, CA, United States, 12/06/05. https://doi.org/10.1109/MWSYM.2005.1516584

TY - GEN

T1 - Low noise and high gain RF MOSFETs on plastic substrates

AU - Kao, H. L.

AU - Chin, Albert

AU - Huang, C. C.

AU - Hung, B. F.

AU - Chiang, K. C.

AU - Lai, Z. M.

AU - McAlister, S. P.

AU - Chi, C. C.

PY - 2005

Y1 - 2005

N2 - A low minimum noise figure (NF min) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 μm RF MOSFETs on plastic, made by substrate thinning (∼30 μm), transfer and bonding. The performance can be further improved to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.

AB - A low minimum noise figure (NF min) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 μm RF MOSFETs on plastic, made by substrate thinning (∼30 μm), transfer and bonding. The performance can be further improved to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.

KW - Associated gain

KW - MOSFET

KW - Plastic

KW - RF Noise

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M3 - 会议稿件

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SN - 0780388461

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T3 - IEEE MTT-S International Microwave Symposium Digest

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EP - 298

BT - 2005 IEEE MTT-S International Microwave Symposium Digest

T2 - 2005 IEEE MTT-S International Microwave Symposium

Y2 - 12 June 2005 through 17 June 2005

ER -

Low noise and high gain RF MOSFETs on plastic substrates

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Keywords

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