Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design

Min Hung Shih; Hsiang Chun Wang; Hsien Chin Chiu; Hsuan Ling Kao; Chung Yi Li

Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al_0.5Ga_0.5N Etching Stop Layer Design

Min Hung Shih, Hsiang Chun Wang, Hsien Chin Chiu^*, Hsuan Ling Kao, Chung Yi Li

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, normally off p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) were developed using Al0.5Ga0.5N etching stop layer. Compared with AlN etching stop layer, the device not only decreased lattice defects but has also improved the linearity in drain current, which can be attributed to lattice matching. The results show that the Al0.5Ga0.5N etching stop layer can reduce surface dislocation and obtain better characteristics. The p-GaN HMET using Al0.5Ga0.5N etching stop layer achieved a higher drain current on/off ratio of 2.47×10⁷, lower gate leakage current of 1.55×10⁻5 A/mm, and low on-state resistance of 21.65 Ω·mm. The dynamic RON of Al0.5Ga0.5N etching stop layer and AlN etching stop layer device are 1.69 times and 2.26 times.

Original language	English
Title of host publication	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers
Publisher	CS Mantech
Pages	157-159
Number of pages	3
ISBN (Electronic)	9781893580312
State	Published - 2021
Event	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 - Orlando, Virtual, United States Duration: 24 05 2021 → 27 05 2021

Publication series

Name	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Conference

Conference	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021
Country/Territory	United States
City	Orlando, Virtual
Period	24/05/21 → 27/05/21

Bibliographical note

Publisher Copyright:
© 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.

Keywords

Etching stop layer
High selection ratio
Normally off
P-GaN gate HEMT

Cite this

Shih, M. H., Wang, H. C., Chiu, H. C., Kao, H. L., & Li, C. Y. (2021). Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al_0.5Ga_0.5N Etching Stop Layer Design. In CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers (pp. 157-159). (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers). CS Mantech.

Shih, Min Hung ; Wang, Hsiang Chun ; Chiu, Hsien Chin et al. / Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al_0.5Ga_0.5N Etching Stop Layer Design. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. pp. 157-159 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

@inproceedings{1ba2700eb00f4b509b8249099813f6b5,

title = "Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design",

abstract = "In this work, normally off p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) were developed using Al0.5Ga0.5N etching stop layer. Compared with AlN etching stop layer, the device not only decreased lattice defects but has also improved the linearity in drain current, which can be attributed to lattice matching. The results show that the Al0.5Ga0.5N etching stop layer can reduce surface dislocation and obtain better characteristics. The p-GaN HMET using Al0.5Ga0.5N etching stop layer achieved a higher drain current on/off ratio of 2.47×107, lower gate leakage current of 1.55×10−5 A/mm, and low on-state resistance of 21.65 Ω·mm. The dynamic RON of Al0.5Ga0.5N etching stop layer and AlN etching stop layer device are 1.69 times and 2.26 times.",

keywords = "Etching stop layer, High selection ratio, Normally off, P-GaN gate HEMT",

author = "Shih, {Min Hung} and Wang, {Hsiang Chun} and Chiu, {Hsien Chin} and Kao, {Hsuan Ling} and Li, {Chung Yi}",

note = "Publisher Copyright: {\textcopyright} 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.; 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 ; Conference date: 24-05-2021 Through 27-05-2021",

year = "2021",

language = "英语",

series = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

publisher = "CS Mantech",

pages = "157--159",

booktitle = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

}

Shih, MH, Wang, HC, Chiu, HC , Kao, HL & Li, CY 2021, Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al_0.5Ga_0.5N Etching Stop Layer Design. in CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, CS Mantech, pp. 157-159, 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021, Orlando, Virtual, United States, 24/05/21.

Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al_0.5Ga_0.5N Etching Stop Layer Design. / Shih, Min Hung; Wang, Hsiang Chun; Chiu, Hsien Chin et al.
CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. p. 157-159 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design

AU - Shih, Min Hung

AU - Wang, Hsiang Chun

AU - Chiu, Hsien Chin

AU - Kao, Hsuan Ling

AU - Li, Chung Yi

PY - 2021

Y1 - 2021

N2 - In this work, normally off p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) were developed using Al0.5Ga0.5N etching stop layer. Compared with AlN etching stop layer, the device not only decreased lattice defects but has also improved the linearity in drain current, which can be attributed to lattice matching. The results show that the Al0.5Ga0.5N etching stop layer can reduce surface dislocation and obtain better characteristics. The p-GaN HMET using Al0.5Ga0.5N etching stop layer achieved a higher drain current on/off ratio of 2.47×107, lower gate leakage current of 1.55×10−5 A/mm, and low on-state resistance of 21.65 Ω·mm. The dynamic RON of Al0.5Ga0.5N etching stop layer and AlN etching stop layer device are 1.69 times and 2.26 times.

AB - In this work, normally off p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) were developed using Al0.5Ga0.5N etching stop layer. Compared with AlN etching stop layer, the device not only decreased lattice defects but has also improved the linearity in drain current, which can be attributed to lattice matching. The results show that the Al0.5Ga0.5N etching stop layer can reduce surface dislocation and obtain better characteristics. The p-GaN HMET using Al0.5Ga0.5N etching stop layer achieved a higher drain current on/off ratio of 2.47×107, lower gate leakage current of 1.55×10−5 A/mm, and low on-state resistance of 21.65 Ω·mm. The dynamic RON of Al0.5Ga0.5N etching stop layer and AlN etching stop layer device are 1.69 times and 2.26 times.

KW - Etching stop layer

KW - High selection ratio

KW - Normally off

KW - P-GaN gate HEMT

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M3 - 会议稿件

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SP - 157

EP - 159

BT - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

PB - CS Mantech

T2 - 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021

Y2 - 24 May 2021 through 27 May 2021

ER -

Shih MH, Wang HC, Chiu HC , Kao HL , Li CY. Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al_0.5Ga_0.5N Etching Stop Layer Design. In CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech. 2021. p. 157-159. (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).