TY - JOUR
T1 - Low phase noise V-band push-push voltage controlled oscillator using 0.15 μm GaAs pseudomorphic high electron-mobility transistor technology
AU - Kao, H. L.
AU - Shih, S. P.
AU - Yeh, C. S.
PY - 2012/4/24
Y1 - 2012/4/24
N2 - A low phase noise, low dissipated power and small-size V-band voltage-controlled oscillator (VCO) using dual cross-coupled pair configuration, capacitance-splitting technique and push-push topology is presented. The V-band VCO circuit uses 0.15 μm GaAs pseudomorphic high electron-mobility transistor technology. The VCO has low phase noise, of -108.43 dBc/Hz, at a 1 MHz offset from a 62 GHz carrier and can be tuned from 61.11 to 62.66 GHz. The figure of merit is -190.45 dBc/Hz. The power consumption of the VCO with 1.04 mm 2 chip area is 24 mW, from a 1 V power supply.
AB - A low phase noise, low dissipated power and small-size V-band voltage-controlled oscillator (VCO) using dual cross-coupled pair configuration, capacitance-splitting technique and push-push topology is presented. The V-band VCO circuit uses 0.15 μm GaAs pseudomorphic high electron-mobility transistor technology. The VCO has low phase noise, of -108.43 dBc/Hz, at a 1 MHz offset from a 62 GHz carrier and can be tuned from 61.11 to 62.66 GHz. The figure of merit is -190.45 dBc/Hz. The power consumption of the VCO with 1.04 mm 2 chip area is 24 mW, from a 1 V power supply.
UR - https://www.scopus.com/pages/publications/84862190141
U2 - 10.1049/iet-map.2011.0348
DO - 10.1049/iet-map.2011.0348
M3 - 文章
AN - SCOPUS:84862190141
SN - 1751-8725
VL - 6
SP - 653
EP - 657
JO - IET Microwaves, Antennas and Propagation
JF - IET Microwaves, Antennas and Propagation
IS - 6
M1 - IMAPCH000006000006000653000001
ER -