Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5Zr0.5O2by Optimizing TiNxInterfacial Capping Layer and Its Fatigue Mechanism

Asim Senapati; Zhao Feng Lou; Jia Yang Lee; Yi Pin Chen; Shih Yin Huang; Siddheswar Maikap; Min Hung Lee; Chee Wee Liu

doi:10.1109/LED.2024.3368422

Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf_0.5Zr_0.5O₂by Optimizing TiN_xInterfacial Capping Layer and Its Fatigue Mechanism

Asim Senapati, Zhao Feng Lou, Jia Yang Lee, Yi Pin Chen, Shih Yin Huang, Siddheswar Maikap^*, Min Hung Lee^*, Chee Wee Liu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

Abstract

Double remnant polarization (2Pr values are increased significantly from 17.1μC/cm2 to 39.9μC/cm2 by reducing the TiNx interfacial capping layer (ICL) thickness from 3 nm to 1 nm in the Ru/TiNx/Hf0.5 Zr0.5O2(HZO)/TiN structure owing to lower monoclinic (m) phase with respect to orthorhombic (o) plus rhombohedral (r) phases. These phases are observed by geometrical phase analysis (GPA) of high-resolution transmission electron microscope (HRTEM) images. An optimized 2 nm TiNx ICL ferroelectric memory shows lowest fatigue and mechanism is higher m-phase starting to grow from the HZO/TiN BE interface, which is evidenced in the HRTEM image after long endurance of 1011 cycles under high ±4 MV/cm, 0.5μs (remaining higher 2Pr value of 20μC/cm2).

Original language	English
Pages (from-to)	673-676
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	45
Issue number	4
DOIs	https://doi.org/10.1109/LED.2024.3368422
State	Published - 01 04 2024

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Electrodes
Fatigue
fatigue mechanism
ferroelectric memory
Films
furnace annealing
Leakage currents
long endurance
Reservoirs
scavenged-Ru based electrode
Tin
TiNx interfacial capping layer
Zirconium
TiN interfacial capping layer

Access to Document

10.1109/LED.2024.3368422

Cite this

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title = "Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5Zr0.5O2by Optimizing TiNxInterfacial Capping Layer and Its Fatigue Mechanism",

abstract = "Double remnant polarization (2Pr values are increased significantly from 17.1μC/cm2 to 39.9μC/cm2 by reducing the TiNx interfacial capping layer (ICL) thickness from 3 nm to 1 nm in the Ru/TiNx/Hf0.5 Zr0.5O2(HZO)/TiN structure owing to lower monoclinic (m) phase with respect to orthorhombic (o) plus rhombohedral (r) phases. These phases are observed by geometrical phase analysis (GPA) of high-resolution transmission electron microscope (HRTEM) images. An optimized 2 nm TiNx ICL ferroelectric memory shows lowest fatigue and mechanism is higher m-phase starting to grow from the HZO/TiN BE interface, which is evidenced in the HRTEM image after long endurance of 1011 cycles under high ±4 MV/cm, 0.5μs (remaining higher 2Pr value of 20μC/cm2).",

keywords = "Electrodes, Fatigue, fatigue mechanism, ferroelectric memory, Films, furnace annealing, Leakage currents, long endurance, Reservoirs, scavenged-Ru based electrode, Tin, TiN<sub xmlns:ali={"}http://www.niso.org/schemas/ali/1.0/{"} xmlns:mml={"}http://www.w3.org/1998/Math/MathML{"} xmlns:xlink={"}http://www.w3.org/1999/xlink{"} xmlns:xsi={"}http://www.w3.org/2001/XMLSchema-instance{"}>x interfacial capping layer, Zirconium, TiN interfacial capping layer",

author = "Asim Senapati and Lou, {Zhao Feng} and Lee, {Jia Yang} and Chen, {Yi Pin} and Huang, {Shih Yin} and Siddheswar Maikap and Lee, {Min Hung} and Liu, {Chee Wee}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2024",

month = apr,

day = "1",

doi = "10.1109/LED.2024.3368422",

language = "英语",

volume = "45",

pages = "673--676",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

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Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf_0.5Zr_0.5O₂by Optimizing TiN_xInterfacial Capping Layer and Its Fatigue Mechanism. / Senapati, Asim; Lou, Zhao Feng; Lee, Jia Yang et al.
In: IEEE Electron Device Letters, Vol. 45, No. 4, 01.04.2024, p. 673-676.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5Zr0.5O2by Optimizing TiNxInterfacial Capping Layer and Its Fatigue Mechanism

AU - Senapati, Asim

AU - Lou, Zhao Feng

AU - Lee, Jia Yang

AU - Chen, Yi Pin

AU - Huang, Shih Yin

AU - Maikap, Siddheswar

AU - Lee, Min Hung

AU - Liu, Chee Wee

PY - 2024/4/1

Y1 - 2024/4/1

N2 - Double remnant polarization (2Pr values are increased significantly from 17.1μC/cm2 to 39.9μC/cm2 by reducing the TiNx interfacial capping layer (ICL) thickness from 3 nm to 1 nm in the Ru/TiNx/Hf0.5 Zr0.5O2(HZO)/TiN structure owing to lower monoclinic (m) phase with respect to orthorhombic (o) plus rhombohedral (r) phases. These phases are observed by geometrical phase analysis (GPA) of high-resolution transmission electron microscope (HRTEM) images. An optimized 2 nm TiNx ICL ferroelectric memory shows lowest fatigue and mechanism is higher m-phase starting to grow from the HZO/TiN BE interface, which is evidenced in the HRTEM image after long endurance of 1011 cycles under high ±4 MV/cm, 0.5μs (remaining higher 2Pr value of 20μC/cm2).

AB - Double remnant polarization (2Pr values are increased significantly from 17.1μC/cm2 to 39.9μC/cm2 by reducing the TiNx interfacial capping layer (ICL) thickness from 3 nm to 1 nm in the Ru/TiNx/Hf0.5 Zr0.5O2(HZO)/TiN structure owing to lower monoclinic (m) phase with respect to orthorhombic (o) plus rhombohedral (r) phases. These phases are observed by geometrical phase analysis (GPA) of high-resolution transmission electron microscope (HRTEM) images. An optimized 2 nm TiNx ICL ferroelectric memory shows lowest fatigue and mechanism is higher m-phase starting to grow from the HZO/TiN BE interface, which is evidenced in the HRTEM image after long endurance of 1011 cycles under high ±4 MV/cm, 0.5μs (remaining higher 2Pr value of 20μC/cm2).

KW - Electrodes

KW - Fatigue

KW - fatigue mechanism

KW - ferroelectric memory

KW - Films

KW - furnace annealing

KW - Leakage currents

KW - long endurance

KW - Reservoirs

KW - scavenged-Ru based electrode

KW - Tin

KW - TiNx interfacial capping layer

KW - Zirconium

KW - TiN interfacial capping layer

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U2 - 10.1109/LED.2024.3368422

DO - 10.1109/LED.2024.3368422

M3 - 文章

AN - SCOPUS:85186104422

SN - 0741-3106

VL - 45

SP - 673

EP - 676

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -