Low power operation of resistive switching memory device using novel W/Ge0.4Se0.6/Cu/Al structure

S. Z. Rahaman; S. Maikap; H. C. Chiu; C. H. Lin; T. Y. Wu; Y. S. Chen; P. J. Tzeng; F. Chen; M. J. Kao; M. J. Tsai

doi:10.1109/IMW.2009.5090597

Low power operation of resistive switching memory device using novel W/Ge_0.4Se_0.6/Cu/Al structure

S. Z. Rahaman
, S. Maikap
, H. C. Chiu
, C. H. Lin
, T. Y. Wu
, Y. S. Chen
, P. J. Tzeng
, F. Chen
, M. J. Kao
, M. J. Tsai

Department of Electronic Engineering

Chang Gung University
Industrial Technology Research Institute of Taiwan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

Bipolar resistive switching memory device with a low power operation (200μA/1.3V) in a W/Ge_0.4Se_0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (R_Low) decreases with increasing the programming current from 1nA to 500μA, which can be useful for multi-level of data storage. This resistive memory device has a large threshold voltage of ∼0.5V, good resistance ratio (R _High/R_Low) of 1.6×10², good endurance of >1.5×10⁵ cycles, and excellent retention (>11 hours) with a resistance ratio of >1.3×10² at 150°C can be used in future nonvolatile memories.

Original language	English
Title of host publication	2009 IEEE International Memory Workshop, IMW '09
DOIs	https://doi.org/10.1109/IMW.2009.5090597
State	Published - 2009
Event	2009 IEEE International Memory Workshop, IMW '09 - Monterey, CA, United States Duration: 10 05 2009 → 14 05 2009

Publication series

Name	2009 IEEE International Memory Workshop, IMW '09

Conference

Conference	2009 IEEE International Memory Workshop, IMW '09
Country/Territory	United States
City	Monterey, CA
Period	10/05/09 → 14/05/09

Keywords

Cu chain
Electromigration and oxidation
Nanoscale memory
Resistive switching

Access to Document

10.1109/IMW.2009.5090597

Cite this

Rahaman, S. Z., Maikap, S., Chiu, H. C., Lin, C. H., Wu, T. Y., Chen, Y. S., Tzeng, P. J., Chen, F., Kao, M. J., & Tsai, M. J. (2009). Low power operation of resistive switching memory device using novel W/Ge_0.4Se_0.6/Cu/Al structure. In 2009 IEEE International Memory Workshop, IMW '09 Article 5090597 (2009 IEEE International Memory Workshop, IMW '09). https://doi.org/10.1109/IMW.2009.5090597

@inproceedings{607ea1df676443e18d7b2de8db01966b,

title = "Low power operation of resistive switching memory device using novel W/Ge0.4Se0.6/Cu/Al structure",

abstract = "Bipolar resistive switching memory device with a low power operation (200μA/1.3V) in a W/Ge0.4Se0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (RLow) decreases with increasing the programming current from 1nA to 500μA, which can be useful for multi-level of data storage. This resistive memory device has a large threshold voltage of ∼0.5V, good resistance ratio (R High/RLow) of 1.6{\texttimes}102, good endurance of >1.5{\texttimes}105 cycles, and excellent retention (>11 hours) with a resistance ratio of >1.3{\texttimes}102 at 150°C can be used in future nonvolatile memories.",

keywords = "Cu chain, Electromigration and oxidation, Nanoscale memory, Resistive switching",

author = "Rahaman, \{S. Z.\} and S. Maikap and Chiu, \{H. C.\} and Lin, \{C. H.\} and Wu, \{T. Y.\} and Chen, \{Y. S.\} and Tzeng, \{P. J.\} and F. Chen and Kao, \{M. J.\} and Tsai, \{M. J.\}",

year = "2009",

doi = "10.1109/IMW.2009.5090597",

language = "英语",

isbn = "9781424437610",

series = "2009 IEEE International Memory Workshop, IMW '09",

booktitle = "2009 IEEE International Memory Workshop, IMW '09",

note = "2009 IEEE International Memory Workshop, IMW '09 ; Conference date: 10-05-2009 Through 14-05-2009",

}

Rahaman, SZ, Maikap, S , Chiu, HC, Lin, CH, Wu, TY, Chen, YS, Tzeng, PJ, Chen, F, Kao, MJ & Tsai, MJ 2009, Low power operation of resistive switching memory device using novel W/Ge_0.4Se_0.6/Cu/Al structure. in 2009 IEEE International Memory Workshop, IMW '09., 5090597, 2009 IEEE International Memory Workshop, IMW '09, 2009 IEEE International Memory Workshop, IMW '09, Monterey, CA, United States, 10/05/09. https://doi.org/10.1109/IMW.2009.5090597

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AU - Rahaman, S. Z.

AU - Maikap, S.

AU - Chiu, H. C.

AU - Lin, C. H.

AU - Wu, T. Y.

AU - Chen, Y. S.

AU - Tzeng, P. J.

AU - Chen, F.

AU - Kao, M. J.

AU - Tsai, M. J.

PY - 2009

Y1 - 2009

N2 - Bipolar resistive switching memory device with a low power operation (200μA/1.3V) in a W/Ge0.4Se0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (RLow) decreases with increasing the programming current from 1nA to 500μA, which can be useful for multi-level of data storage. This resistive memory device has a large threshold voltage of ∼0.5V, good resistance ratio (R High/RLow) of 1.6×102, good endurance of >1.5×105 cycles, and excellent retention (>11 hours) with a resistance ratio of >1.3×102 at 150°C can be used in future nonvolatile memories.

AB - Bipolar resistive switching memory device with a low power operation (200μA/1.3V) in a W/Ge0.4Se0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (RLow) decreases with increasing the programming current from 1nA to 500μA, which can be useful for multi-level of data storage. This resistive memory device has a large threshold voltage of ∼0.5V, good resistance ratio (R High/RLow) of 1.6×102, good endurance of >1.5×105 cycles, and excellent retention (>11 hours) with a resistance ratio of >1.3×102 at 150°C can be used in future nonvolatile memories.

KW - Cu chain

KW - Electromigration and oxidation

KW - Nanoscale memory

KW - Resistive switching

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