Low power resistive switching memory using Cu metallic filament in Ge_0.2Se_0.8 solid-electrolyte

Bipolar resistive switching memory device using Cu metallic filament in Au/Cu/Ge_0.2Se_0.8/W memory device structure has been investigated. This resistive memory device has the suitable threshold voltage of V_th > 0.18 V, good resistance ratio (R_High/R_Low) of 2.6 × 10³, good endurance of >10⁴ cycles with a programming current of 0.3 mA/0.8 mA, and 5 h of retention time at low compliance current of 10 nA. The low resistance state (R_Low) of the memory device decreases with increasing the compliance current from 1 nA to 500 μA for different device sizes from 0.2 μm to 4 μm. The memory device can work at very low compliance current of 1 nA, which can be applicable for extremely low power-consuming memory devices. Crown