Low temperature wafer bonding in medium vacuum

W. B. Yu*, C. M. Tan, J. Wei, S. S. Deng

*Corresponding author for this work

Research output: Contribution to conferenceConference Paperpeer-review

Abstract

Direct wafer bonding was performed under medium vacuum condition. The effect of the sequence of wafers contact and vacuum application, plasma treatment, and annealing temperature on the bonding quality was investigated. From the comparison of the bonding efficiency, contacting two wafers in air rather than in vacuum produces much less bubbles. Besides, it was also found that ex-situ plasma treatment degrades the bonding quality. It is believed that the degradation is caused by contamination and damage induced by the plasma treatment before vacuum wafer bonding. For vacuum bonding without plasma treatment, good bonding can be achieved at temperature as low as 300 æC.

Original languageEnglish
Pages303-307
Number of pages5
DOIs
StatePublished - 2004
Externally publishedYes
Event2004 ASME International Mechanical Engineering Congress and Exposition, IMECE 2004 - Anaheim, CA, United States
Duration: 13 11 200419 11 2004

Conference

Conference2004 ASME International Mechanical Engineering Congress and Exposition, IMECE 2004
Country/TerritoryUnited States
CityAnaheim, CA
Period13/11/0419/11/04

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