Low threshold 1.55 μm compressive-strained multiple quantum well lasers for high temperature and high power operation

Chwan Yang Chang; Wei Lin; Ming Cheng Wang; Tian Tsomg Shi; Jau Yang Su; Sun Chien Ko; Yuan Kuang Tu

doi:10.1109/EDMS.1994.771305

Low threshold 1.55 μm compressive-strained multiple quantum well lasers for high temperature and high power operation

Chwan Yang Chang
, Wei Lin
, Ming Cheng Wang
, Tian Tsomg Shi
, Jau Yang Su
, Sun Chien Ko
, Yuan Kuang Tu

Ministry of Transportation and Communications, Taiwan

Research output: Contribution to conference › Conference Paper › peer-review

1 Scopus citations

Abstract

We report the fabrication and high temperature operation characteristics of the 1.55 μm InGaAsP/InP compressive-strained multiple-quantum-well capped-mesaburied-heterostructure (MQW-CMBH) lasers. The laser performances of low threshold current achieved by compressive-strained multiple quantum wells and effective current blocking obtained by p-n-p-n InP layers are investigated. For as-cleaved lasers, continuous wave (CW) output power more than 6 mW at 100°C and pulsed output power up to 51 mW at 20°C are demonstrated. The fabricated LDs have been evaluated by reliability testing, and were estimated having lifetime of around 136,000 hours.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771305
State	Published - 1994
Externally published	Yes
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 12 07 1994 → 15 07 1994

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	12/07/94 → 15/07/94

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Publisher Copyright:
© 1994 IEEE.

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10.1109/EDMS.1994.771305

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@conference{b04492694afa4434bdb87a3fae802be8,

title = "Low threshold 1.55 μm compressive-strained multiple quantum well lasers for high temperature and high power operation",

abstract = "We report the fabrication and high temperature operation characteristics of the 1.55 μm InGaAsP/InP compressive-strained multiple-quantum-well capped-mesaburied-heterostructure (MQW-CMBH) lasers. The laser performances of low threshold current achieved by compressive-strained multiple quantum wells and effective current blocking obtained by p-n-p-n InP layers are investigated. For as-cleaved lasers, continuous wave (CW) output power more than 6 mW at 100°C and pulsed output power up to 51 mW at 20°C are demonstrated. The fabricated LDs have been evaluated by reliability testing, and were estimated having lifetime of around 136,000 hours.",

author = "Chang, \{Chwan Yang\} and Wei Lin and Wang, \{Ming Cheng\} and Shi, \{Tian Tsomg\} and Su, \{Jau Yang\} and Ko, \{Sun Chien\} and Tu, \{Yuan Kuang\}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771305",

language = "英语",

}

TY - CONF

T1 - Low threshold 1.55 μm compressive-strained multiple quantum well lasers for high temperature and high power operation

AU - Chang, Chwan Yang

AU - Lin, Wei

AU - Wang, Ming Cheng

AU - Shi, Tian Tsomg

AU - Su, Jau Yang

AU - Ko, Sun Chien

AU - Tu, Yuan Kuang

PY - 1994

Y1 - 1994

N2 - We report the fabrication and high temperature operation characteristics of the 1.55 μm InGaAsP/InP compressive-strained multiple-quantum-well capped-mesaburied-heterostructure (MQW-CMBH) lasers. The laser performances of low threshold current achieved by compressive-strained multiple quantum wells and effective current blocking obtained by p-n-p-n InP layers are investigated. For as-cleaved lasers, continuous wave (CW) output power more than 6 mW at 100°C and pulsed output power up to 51 mW at 20°C are demonstrated. The fabricated LDs have been evaluated by reliability testing, and were estimated having lifetime of around 136,000 hours.

AB - We report the fabrication and high temperature operation characteristics of the 1.55 μm InGaAsP/InP compressive-strained multiple-quantum-well capped-mesaburied-heterostructure (MQW-CMBH) lasers. The laser performances of low threshold current achieved by compressive-strained multiple quantum wells and effective current blocking obtained by p-n-p-n InP layers are investigated. For as-cleaved lasers, continuous wave (CW) output power more than 6 mW at 100°C and pulsed output power up to 51 mW at 20°C are demonstrated. The fabricated LDs have been evaluated by reliability testing, and were estimated having lifetime of around 136,000 hours.

UR - https://www.scopus.com/pages/publications/85063570175

U2 - 10.1109/EDMS.1994.771305

DO - 10.1109/EDMS.1994.771305

M3 - 论文

AN - SCOPUS:85063570175

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

Low threshold 1.55 μm compressive-strained multiple quantum well lasers for high temperature and high power operation

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