Low-Voltage InGaZnO Ion-Sensitive Thin-Film Transistors Fabricated by Low-Temperature Process

Chih Hung Lu; Tuo Hung Hou; Tung Ming Pan

doi:10.1109/TED.2016.2614959

Low-Voltage InGaZnO Ion-Sensitive Thin-Film Transistors Fabricated by Low-Temperature Process

Chih Hung Lu, Tuo Hung Hou, Tung Ming Pan

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

19 Scopus citations

Abstract

In this brief, we developed a low-voltage ( V_DS =0.5 V and V GS = 0.8 V) InGaZnO ion-sensitive thin-film transistor (ISTFT) sensor using a high- κ HfO₂ sensing membrane grown by lowerature atomic layer deposition. The InGaZnO TFT exhibited a low threshold voltage of 0.2 V, a high field-effect mobility of 5.9 cm²/V-s, a small subthreshold swing of 90 mV/decade, and high I scriptscriptstyle ON I scriptscriptstyle OFF ratio of 2.4 × 10⁷. The pH sensor based on an InGaZnO ISTFT device exhibits a high sensitivity of 60.5 mV/pH and good linearity in the pH range from 3 to 11. Moreover, such a pH ISTFT sensor presents a hysteresis width of 8 mV after a pH loop of 7→ 4→ 7→ 10→ 7 and a low drift rate of 2.5 mV/h at pH 7.

Original language	English
Article number	7589998
Pages (from-to)	5060-5063
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	12
DOIs	https://doi.org/10.1109/TED.2016.2614959
State	Published - 12 2016

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

HfO
InGaZnO
ion-sensitive thin-film transistor (ISTFT)
pH sensitivity

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10.1109/TED.2016.2614959

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title = "Low-Voltage InGaZnO Ion-Sensitive Thin-Film Transistors Fabricated by Low-Temperature Process",

abstract = "In this brief, we developed a low-voltage ( VDS =0.5 V and V GS = 0.8 V) InGaZnO ion-sensitive thin-film transistor (ISTFT) sensor using a high- κ HfO2 sensing membrane grown by lowerature atomic layer deposition. The InGaZnO TFT exhibited a low threshold voltage of 0.2 V, a high field-effect mobility of 5.9 cm2/V-s, a small subthreshold swing of 90 mV/decade, and high I scriptscriptstyle ON I scriptscriptstyle OFF ratio of 2.4 × 107. The pH sensor based on an InGaZnO ISTFT device exhibits a high sensitivity of 60.5 mV/pH and good linearity in the pH range from 3 to 11. Moreover, such a pH ISTFT sensor presents a hysteresis width of 8 mV after a pH loop of 7→ 4→ 7→ 10→ 7 and a low drift rate of 2.5 mV/h at pH 7.",

keywords = "HfO, InGaZnO, ion-sensitive thin-film transistor (ISTFT), pH sensitivity",

author = "Lu, {Chih Hung} and Hou, {Tuo Hung} and Pan, {Tung Ming}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2016",

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doi = "10.1109/TED.2016.2614959",

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AU - Lu, Chih Hung

AU - Hou, Tuo Hung

AU - Pan, Tung Ming

PY - 2016/12

Y1 - 2016/12

N2 - In this brief, we developed a low-voltage ( VDS =0.5 V and V GS = 0.8 V) InGaZnO ion-sensitive thin-film transistor (ISTFT) sensor using a high- κ HfO2 sensing membrane grown by lowerature atomic layer deposition. The InGaZnO TFT exhibited a low threshold voltage of 0.2 V, a high field-effect mobility of 5.9 cm2/V-s, a small subthreshold swing of 90 mV/decade, and high I scriptscriptstyle ON I scriptscriptstyle OFF ratio of 2.4 × 107. The pH sensor based on an InGaZnO ISTFT device exhibits a high sensitivity of 60.5 mV/pH and good linearity in the pH range from 3 to 11. Moreover, such a pH ISTFT sensor presents a hysteresis width of 8 mV after a pH loop of 7→ 4→ 7→ 10→ 7 and a low drift rate of 2.5 mV/h at pH 7.

AB - In this brief, we developed a low-voltage ( VDS =0.5 V and V GS = 0.8 V) InGaZnO ion-sensitive thin-film transistor (ISTFT) sensor using a high- κ HfO2 sensing membrane grown by lowerature atomic layer deposition. The InGaZnO TFT exhibited a low threshold voltage of 0.2 V, a high field-effect mobility of 5.9 cm2/V-s, a small subthreshold swing of 90 mV/decade, and high I scriptscriptstyle ON I scriptscriptstyle OFF ratio of 2.4 × 107. The pH sensor based on an InGaZnO ISTFT device exhibits a high sensitivity of 60.5 mV/pH and good linearity in the pH range from 3 to 11. Moreover, such a pH ISTFT sensor presents a hysteresis width of 8 mV after a pH loop of 7→ 4→ 7→ 10→ 7 and a low drift rate of 2.5 mV/h at pH 7.

KW - HfO

KW - InGaZnO

KW - ion-sensitive thin-film transistor (ISTFT)

KW - pH sensitivity

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M3 - 文章

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

M1 - 7589998

ER -

Low-Voltage InGaZnO Ion-Sensitive Thin-Film Transistors Fabricated by Low-Temperature Process

Abstract

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Keywords

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