Magnesium doping of In-rich InGaN

InN and In-rich InGaN were grown by metal organic vapor phase epitaxy with magnesium doping. A set of samples were grown at 550°C, whereas a second set of samples were grown at increasing temperature with Ga content. Upon annealing, p-InGaN was obtained from the second set up to an in content above 50%, with an acceptor concentration of ∼1 × 10¹⁹ cm ^-3 and a mobility of 1-2 cm² V^-1 s ^-1. None of the samples grown at a constant temperature of 550°C showed a p-behavior after heat treatment. The electrical, optical, structural and morphological characteristics of the films grown were analyzed, and the leveling off of hole concentration beyond an In content of 30% was consistent with the reported decreasing activation energy of Mg with increasing in content.