Material and electrical characterizations of high-k Ta2O5 dielectric material deposited on polycrystalline silicon and single crystalline substrate

Chyuan Haur Kao, Hsiang Chen*, Chian You Chen

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

10 Scopus citations

Abstract

Samples of high-k Ta2O5 film as a high-k gate dielectric sputtered on both a single crystalline substrate and a polycrystalline silicon substrate and annealed at different temperatures were fabricated and compared. Samples were examined using various material and electrical analyses, including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force spectroscopy (AFM), equivalent oxide thickness (EOT), JE characteristics, charge-to-breakdown Weibull plots, and gate voltage shift versus stress time. The research concludes that a Ta2O5 dielectric on a single crystalline substrate had fewer structural defects than a high-k/polysilicon interface, forming a dielectric with better material properties and electrical reliability.

Original languageEnglish
Pages (from-to)36-41
Number of pages6
JournalMicroelectronic Engineering
Volume138
DOIs
StatePublished - 20 04 2015

Bibliographical note

Publisher Copyright:
© 2015 Elsevier B.V.

Keywords

  • Annealing
  • Electrical measurements
  • Material quality
  • Polysilicon
  • Single crystalline silicon
  • TaO

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