Material, electrical, and optical characterizations of high-K Sm 2TiO5 dielectric deposited on polycrystalline silicon

Hsiang Chen; Chyuan Haur Kao; Chun Wei Lin; Chuan Hao Liao

doi:10.1080/00150193.2012.732460

Material, electrical, and optical characterizations of high-K Sm ₂TiO₅ dielectric deposited on polycrystalline silicon

Hsiang Chen^*, Chyuan Haur Kao, Chun Wei Lin, Chuan Hao Liao

^*Corresponding author for this work

Department of Electronic Engineering

National Chi Nan University

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

This paper examines high-k Sm₂TiO₅ on polycrystalline silicon film treated in different annealing conditions and fabricated as a high-k gate dielectric. Material analyses, electrical characterizations, and optical measurements were performed to assess annealing effects and find an optimal annealing temperature. Results show that annealing at a temperature of 800°C effectively passivates defects such as dangling bonds and traps, and improves dielectric performance.

Original language	English
Pages (from-to)	58-66
Number of pages	9
Journal	Ferroelectrics
Volume	434
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2012.732460
State	Published - 2012
Event	7th International Conference on Microwave Materials and Their Applications, MMA 2012 - Taipei, Taiwan Duration: 03 06 2012 → 06 06 2012

Keywords

Annealing
High-k
Optical characterization
Polysilicon

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10.1080/00150193.2012.732460

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title = "Material, electrical, and optical characterizations of high-K Sm 2TiO5 dielectric deposited on polycrystalline silicon",

abstract = "This paper examines high-k Sm2TiO5 on polycrystalline silicon film treated in different annealing conditions and fabricated as a high-k gate dielectric. Material analyses, electrical characterizations, and optical measurements were performed to assess annealing effects and find an optimal annealing temperature. Results show that annealing at a temperature of 800°C effectively passivates defects such as dangling bonds and traps, and improves dielectric performance.",

keywords = "Annealing, High-k, Optical characterization, Polysilicon",

author = "Hsiang Chen and Kao, {Chyuan Haur} and Lin, {Chun Wei} and Liao, {Chuan Hao}",

year = "2012",

doi = "10.1080/00150193.2012.732460",

language = "英语",

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AU - Chen, Hsiang

AU - Kao, Chyuan Haur

AU - Lin, Chun Wei

AU - Liao, Chuan Hao

PY - 2012

Y1 - 2012

N2 - This paper examines high-k Sm2TiO5 on polycrystalline silicon film treated in different annealing conditions and fabricated as a high-k gate dielectric. Material analyses, electrical characterizations, and optical measurements were performed to assess annealing effects and find an optimal annealing temperature. Results show that annealing at a temperature of 800°C effectively passivates defects such as dangling bonds and traps, and improves dielectric performance.

AB - This paper examines high-k Sm2TiO5 on polycrystalline silicon film treated in different annealing conditions and fabricated as a high-k gate dielectric. Material analyses, electrical characterizations, and optical measurements were performed to assess annealing effects and find an optimal annealing temperature. Results show that annealing at a temperature of 800°C effectively passivates defects such as dangling bonds and traps, and improves dielectric performance.

KW - Annealing

KW - High-k

KW - Optical characterization

KW - Polysilicon

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U2 - 10.1080/00150193.2012.732460

DO - 10.1080/00150193.2012.732460

M3 - 会议文章

AN - SCOPUS:84902000248

SN - 0015-0193

VL - 434

SP - 58

EP - 66

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

T2 - 7th International Conference on Microwave Materials and Their Applications, MMA 2012

Y2 - 3 June 2012 through 6 June 2012

ER -

Material, electrical, and optical characterizations of high-K Sm ₂TiO₅ dielectric deposited on polycrystalline silicon

Abstract

Keywords

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