Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy

Tzer En Nee; Nien Tze Yeh; Jen Inn Chyi; Ching Ting Lee

doi:10.1016/S0038-1101(98)00026-4

Matrix-dependent structural and photoluminescence properties of In_0.5Ga_0.5As quantum dots grown by molecular beam epitaxy

Tzer En Nee^*
, Nien Tze Yeh
, Jen Inn Chyi
, Ching Ting Lee

^*Corresponding author for this work

National Central University

Research output: Contribution to journal › Journal Article › peer-review

13 Scopus citations

Abstract

The properties of the self-organized In_0.5Ga_0.5As quantum dots on In_0.1Ga_0.9As, GaAs, and In_0.1A1_0.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In_0.5Ga_0.5As quantum dots in In_0.1Ga_0.9As matrix exhibit higher intensity as compared to those in GaAs and In_0.1Al_0.9As matrices. It is also found that the activation energy of the In_0.5Ga_0.5As quantum dots in GaAs matrix is higher than that of the dots in In_0.1Ga_0.9As matrix. Whereas the quantum dots in In_0.1Al_0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density.

Original language	English
Pages (from-to)	1331-1334
Number of pages	4
Journal	Solid-State Electronics
Volume	42
Issue number	7-8
DOIs	https://doi.org/10.1016/S0038-1101(98)00026-4
State	Published - 1998
Externally published	Yes

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10.1016/S0038-1101(98)00026-4

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@article{28a4c06d9b154e6a9992cce54d5efe2d,

title = "Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy",

abstract = "The properties of the self-organized In0.5Ga0.5As quantum dots on In0.1Ga0.9As, GaAs, and In0.1A10.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In0.5Ga0.5As quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared to those in GaAs and In0.1Al0.9As matrices. It is also found that the activation energy of the In0.5Ga0.5As quantum dots in GaAs matrix is higher than that of the dots in In0.1Ga0.9As matrix. Whereas the quantum dots in In0.1Al0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density.",

author = "Nee, \{Tzer En\} and Yeh, \{Nien Tze\} and Chyi, \{Jen Inn\} and Lee, \{Ching Ting\}",

year = "1998",

doi = "10.1016/S0038-1101(98)00026-4",

language = "英语",

volume = "42",

pages = "1331--1334",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "7-8",

}

TY - JOUR

T1 - Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy

AU - Nee, Tzer En

AU - Yeh, Nien Tze

AU - Chyi, Jen Inn

AU - Lee, Ching Ting

PY - 1998

Y1 - 1998

N2 - The properties of the self-organized In0.5Ga0.5As quantum dots on In0.1Ga0.9As, GaAs, and In0.1A10.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In0.5Ga0.5As quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared to those in GaAs and In0.1Al0.9As matrices. It is also found that the activation energy of the In0.5Ga0.5As quantum dots in GaAs matrix is higher than that of the dots in In0.1Ga0.9As matrix. Whereas the quantum dots in In0.1Al0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density.

AB - The properties of the self-organized In0.5Ga0.5As quantum dots on In0.1Ga0.9As, GaAs, and In0.1A10.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In0.5Ga0.5As quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared to those in GaAs and In0.1Al0.9As matrices. It is also found that the activation energy of the In0.5Ga0.5As quantum dots in GaAs matrix is higher than that of the dots in In0.1Ga0.9As matrix. Whereas the quantum dots in In0.1Al0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density.

UR - https://www.scopus.com/pages/publications/0032120014

U2 - 10.1016/S0038-1101(98)00026-4

DO - 10.1016/S0038-1101(98)00026-4

M3 - 文章

AN - SCOPUS:0032120014

SN - 0038-1101

VL - 42

SP - 1331

EP - 1334

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 7-8

ER -

Matrix-dependent structural and photoluminescence properties of In_0.5Ga_0.5As quantum dots grown by molecular beam epitaxy

Abstract

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