MBE-grown high κ gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics

W. C. Lee; Y. J. Lee; Y. D. Wu; P. Chang; Y. L. Huang; Y. L. Hsu; J. P. Mannaerts; R. L. Lo; F. R. Chen; S. Maikap; L. S. Lee; W. Y. Hsieh; M. J. Tsai; S. Y. Lin; T. Gustffson; M. Hong; J. Kwo

doi:10.1016/j.jcrysgro.2004.12.127

MBE-grown high κ gate dielectrics of HfO ₂ and (Hf-Al)O ₂ for Si and III-V semiconductors nano-electronics

W. C. Lee, Y. J. Lee, Y. D. Wu, P. Chang, Y. L. Huang, Y. L. Hsu, J. P. Mannaerts, R. L. Lo, F. R. Chen, S. Maikap, L. S. Lee, W. Y. Hsieh, M. J. Tsai, S. Y. Lin, T. Gustffson, M. Hong, J. Kwo^*

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

28 Scopus citations

Abstract

The MBE growth technique is employed to the intensively studied high κ gate dielectrics HfO ₂ (κ=20) and its alloy (Hf-Al)O ₂ in replacing conventional SiO ₂ for nano-CMOS applications. Typical 4.9 nm thick HfO ₂ films showed low leakage current density of ∼0.4 A/cm ² at 1 V, a dielectric constant κ of 20.7 and an EOT of 0.9 nm. Minor frequency dispersion is observed at C-V curves and is removed by an improved two-frequency method. An epitaxial order of (1 0 0) cubic HfO ₂ oxide is observed for the depositions on GaAs(1 0 0) at temperatures over 230 °C.

Original language	English
Pages (from-to)	619-623
Number of pages	5
Journal	Journal of Crystal Growth
Volume	278
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.127
State	Published - 01 05 2005
Externally published	Yes
Event	13th International Conference on Molecular Beam Epitaxy - Duration: 22 08 2004 → 27 08 2004

Keywords

B1. High κ dielectrics
B2. III-V semiconductor
B2. Nano electronics
B2. Si
B3. MOSFET

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10.1016/j.jcrysgro.2004.12.127

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Lee, W. C., Lee, Y. J., Wu, Y. D., Chang, P., Huang, Y. L., Hsu, Y. L., Mannaerts, J. P., Lo, R. L., Chen, F. R., Maikap, S., Lee, L. S., Hsieh, W. Y., Tsai, M. J., Lin, S. Y., Gustffson, T., Hong, M., & Kwo, J. (2005). MBE-grown high κ gate dielectrics of HfO ₂ and (Hf-Al)O ₂ for Si and III-V semiconductors nano-electronics. Journal of Crystal Growth, 278(1-4), 619-623. https://doi.org/10.1016/j.jcrysgro.2004.12.127

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title = "MBE-grown high κ gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics",

abstract = "The MBE growth technique is employed to the intensively studied high κ gate dielectrics HfO 2 (κ=20) and its alloy (Hf-Al)O 2 in replacing conventional SiO 2 for nano-CMOS applications. Typical 4.9 nm thick HfO 2 films showed low leakage current density of ∼0.4 A/cm 2 at 1 V, a dielectric constant κ of 20.7 and an EOT of 0.9 nm. Minor frequency dispersion is observed at C-V curves and is removed by an improved two-frequency method. An epitaxial order of (1 0 0) cubic HfO 2 oxide is observed for the depositions on GaAs(1 0 0) at temperatures over 230 °C.",

keywords = "B1. High κ dielectrics, B2. III-V semiconductor, B2. Nano electronics, B2. Si, B3. MOSFET",

author = "Lee, {W. C.} and Lee, {Y. J.} and Wu, {Y. D.} and P. Chang and Huang, {Y. L.} and Hsu, {Y. L.} and Mannaerts, {J. P.} and Lo, {R. L.} and Chen, {F. R.} and S. Maikap and Lee, {L. S.} and Hsieh, {W. Y.} and Tsai, {M. J.} and Lin, {S. Y.} and T. Gustffson and M. Hong and J. Kwo",

year = "2005",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2004.12.127",

language = "英语",

volume = "278",

pages = "619--623",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

note = "13th International Conference on Molecular Beam Epitaxy ; Conference date: 22-08-2004 Through 27-08-2004",

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Lee, WC, Lee, YJ, Wu, YD, Chang, P, Huang, YL, Hsu, YL, Mannaerts, JP, Lo, RL, Chen, FR, Maikap, S, Lee, LS, Hsieh, WY, Tsai, MJ, Lin, SY, Gustffson, T, Hong, M & Kwo, J 2005, 'MBE-grown high κ gate dielectrics of HfO ₂ and (Hf-Al)O ₂ for Si and III-V semiconductors nano-electronics', Journal of Crystal Growth, vol. 278, no. 1-4, pp. 619-623. https://doi.org/10.1016/j.jcrysgro.2004.12.127

TY - JOUR

T1 - MBE-grown high κ gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics

AU - Lee, W. C.

AU - Lee, Y. J.

AU - Wu, Y. D.

AU - Chang, P.

AU - Huang, Y. L.

AU - Hsu, Y. L.

AU - Mannaerts, J. P.

AU - Lo, R. L.

AU - Chen, F. R.

AU - Maikap, S.

AU - Lee, L. S.

AU - Hsieh, W. Y.

AU - Tsai, M. J.

AU - Lin, S. Y.

AU - Gustffson, T.

AU - Hong, M.

AU - Kwo, J.

PY - 2005/5/1

Y1 - 2005/5/1

N2 - The MBE growth technique is employed to the intensively studied high κ gate dielectrics HfO 2 (κ=20) and its alloy (Hf-Al)O 2 in replacing conventional SiO 2 for nano-CMOS applications. Typical 4.9 nm thick HfO 2 films showed low leakage current density of ∼0.4 A/cm 2 at 1 V, a dielectric constant κ of 20.7 and an EOT of 0.9 nm. Minor frequency dispersion is observed at C-V curves and is removed by an improved two-frequency method. An epitaxial order of (1 0 0) cubic HfO 2 oxide is observed for the depositions on GaAs(1 0 0) at temperatures over 230 °C.

AB - The MBE growth technique is employed to the intensively studied high κ gate dielectrics HfO 2 (κ=20) and its alloy (Hf-Al)O 2 in replacing conventional SiO 2 for nano-CMOS applications. Typical 4.9 nm thick HfO 2 films showed low leakage current density of ∼0.4 A/cm 2 at 1 V, a dielectric constant κ of 20.7 and an EOT of 0.9 nm. Minor frequency dispersion is observed at C-V curves and is removed by an improved two-frequency method. An epitaxial order of (1 0 0) cubic HfO 2 oxide is observed for the depositions on GaAs(1 0 0) at temperatures over 230 °C.

KW - B1. High κ dielectrics

KW - B2. III-V semiconductor

KW - B2. Nano electronics

KW - B2. Si

KW - B3. MOSFET

UR - http://www.scopus.com/inward/record.url?scp=21044441945&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.12.127

DO - 10.1016/j.jcrysgro.2004.12.127

M3 - 会议文章

AN - SCOPUS:21044441945

SN - 0022-0248

VL - 278

SP - 619

EP - 623

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - 13th International Conference on Molecular Beam Epitaxy

Y2 - 22 August 2004 through 27 August 2004

ER -

MBE-grown high κ gate dielectrics of HfO ₂ and (Hf-Al)O ₂ for Si and III-V semiconductors nano-electronics

Abstract

Keywords

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