MBE-grown high κ gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics

W. C. Lee; Y. J. Lee; Y. D. Wu; P. Chang; Y. L. Huang; Y. L. Hsu; J. P. Mannaerts; R. L. Lo; F. R. Chen; S. Maikap; L. S. Lee; W. Y. Hsieh; M. J. Tsai; S. Y. Lin; T. Gustffson; M. Hong; J. Kwo

doi:10.1016/j.jcrysgro.2004.12.127

MBE-grown high κ gate dielectrics of HfO ₂ and (Hf-Al)O ₂ for Si and III-V semiconductors nano-electronics

W. C. Lee
, Y. J. Lee
, Y. D. Wu
, P. Chang
, Y. L. Huang
, Y. L. Hsu
, J. P. Mannaerts
, R. L. Lo
, F. R. Chen
, S. Maikap
, L. S. Lee
, W. Y. Hsieh
, M. J. Tsai
, S. Y. Lin
, T. Gustffson
, M. Hong
, J. Kwo^*

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

30 Scopus citations

Abstract

The MBE growth technique is employed to the intensively studied high κ gate dielectrics HfO ₂ (κ=20) and its alloy (Hf-Al)O ₂ in replacing conventional SiO ₂ for nano-CMOS applications. Typical 4.9 nm thick HfO ₂ films showed low leakage current density of ∼0.4 A/cm ² at 1 V, a dielectric constant κ of 20.7 and an EOT of 0.9 nm. Minor frequency dispersion is observed at C-V curves and is removed by an improved two-frequency method. An epitaxial order of (1 0 0) cubic HfO ₂ oxide is observed for the depositions on GaAs(1 0 0) at temperatures over 230 °C.

Original language	English
Pages (from-to)	619-623
Number of pages	5
Journal	Journal of Crystal Growth
Volume	278
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.127
State	Published - 01 05 2005
Externally published	Yes
Event	13th International Conference on Molecular Beam Epitaxy - Duration: 22 08 2004 → 27 08 2004

Keywords

B1. High κ dielectrics
B2. III-V semiconductor
B2. Nano electronics
B2. Si
B3. MOSFET

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10.1016/j.jcrysgro.2004.12.127

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Lee, W. C., Lee, Y. J., Wu, Y. D., Chang, P., Huang, Y. L., Hsu, Y. L., Mannaerts, J. P., Lo, R. L., Chen, F. R., Maikap, S., Lee, L. S., Hsieh, W. Y., Tsai, M. J., Lin, S. Y., Gustffson, T., Hong, M., & Kwo, J. (2005). MBE-grown high κ gate dielectrics of HfO ₂ and (Hf-Al)O ₂ for Si and III-V semiconductors nano-electronics. Journal of Crystal Growth, 278(1-4), 619-623. https://doi.org/10.1016/j.jcrysgro.2004.12.127

@article{7e4de619b5284a809889bcdc80fb9ee8,

title = "MBE-grown high κ gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics",

abstract = "The MBE growth technique is employed to the intensively studied high κ gate dielectrics HfO 2 (κ=20) and its alloy (Hf-Al)O 2 in replacing conventional SiO 2 for nano-CMOS applications. Typical 4.9 nm thick HfO 2 films showed low leakage current density of ∼0.4 A/cm 2 at 1 V, a dielectric constant κ of 20.7 and an EOT of 0.9 nm. Minor frequency dispersion is observed at C-V curves and is removed by an improved two-frequency method. An epitaxial order of (1 0 0) cubic HfO 2 oxide is observed for the depositions on GaAs(1 0 0) at temperatures over 230 °C.",

keywords = "B1. High κ dielectrics, B2. III-V semiconductor, B2. Nano electronics, B2. Si, B3. MOSFET",

author = "Lee, \{W. C.\} and Lee, \{Y. J.\} and Wu, \{Y. D.\} and P. Chang and Huang, \{Y. L.\} and Hsu, \{Y. L.\} and Mannaerts, \{J. P.\} and Lo, \{R. L.\} and Chen, \{F. R.\} and S. Maikap and Lee, \{L. S.\} and Hsieh, \{W. Y.\} and Tsai, \{M. J.\} and Lin, \{S. Y.\} and T. Gustffson and M. Hong and J. Kwo",

year = "2005",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2004.12.127",

language = "英语",

volume = "278",

pages = "619--623",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

note = "13th International Conference on Molecular Beam Epitaxy ; Conference date: 22-08-2004 Through 27-08-2004",

}

Lee, WC, Lee, YJ, Wu, YD, Chang, P, Huang, YL, Hsu, YL, Mannaerts, JP, Lo, RL, Chen, FR, Maikap, S, Lee, LS, Hsieh, WY, Tsai, MJ, Lin, SY, Gustffson, T, Hong, M & Kwo, J 2005, 'MBE-grown high κ gate dielectrics of HfO ₂ and (Hf-Al)O ₂ for Si and III-V semiconductors nano-electronics', Journal of Crystal Growth, vol. 278, no. 1-4, pp. 619-623. https://doi.org/10.1016/j.jcrysgro.2004.12.127

TY - JOUR

T1 - MBE-grown high κ gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics

AU - Lee, W. C.

AU - Lee, Y. J.

AU - Wu, Y. D.

AU - Chang, P.

AU - Huang, Y. L.

AU - Hsu, Y. L.

AU - Mannaerts, J. P.

AU - Lo, R. L.

AU - Chen, F. R.

AU - Maikap, S.

AU - Lee, L. S.

AU - Hsieh, W. Y.

AU - Tsai, M. J.

AU - Lin, S. Y.

AU - Gustffson, T.

AU - Hong, M.

AU - Kwo, J.

PY - 2005/5/1

Y1 - 2005/5/1

N2 - The MBE growth technique is employed to the intensively studied high κ gate dielectrics HfO 2 (κ=20) and its alloy (Hf-Al)O 2 in replacing conventional SiO 2 for nano-CMOS applications. Typical 4.9 nm thick HfO 2 films showed low leakage current density of ∼0.4 A/cm 2 at 1 V, a dielectric constant κ of 20.7 and an EOT of 0.9 nm. Minor frequency dispersion is observed at C-V curves and is removed by an improved two-frequency method. An epitaxial order of (1 0 0) cubic HfO 2 oxide is observed for the depositions on GaAs(1 0 0) at temperatures over 230 °C.

AB - The MBE growth technique is employed to the intensively studied high κ gate dielectrics HfO 2 (κ=20) and its alloy (Hf-Al)O 2 in replacing conventional SiO 2 for nano-CMOS applications. Typical 4.9 nm thick HfO 2 films showed low leakage current density of ∼0.4 A/cm 2 at 1 V, a dielectric constant κ of 20.7 and an EOT of 0.9 nm. Minor frequency dispersion is observed at C-V curves and is removed by an improved two-frequency method. An epitaxial order of (1 0 0) cubic HfO 2 oxide is observed for the depositions on GaAs(1 0 0) at temperatures over 230 °C.

KW - B1. High κ dielectrics

KW - B2. III-V semiconductor

KW - B2. Nano electronics

KW - B2. Si

KW - B3. MOSFET

UR - https://www.scopus.com/pages/publications/21044441945

U2 - 10.1016/j.jcrysgro.2004.12.127

DO - 10.1016/j.jcrysgro.2004.12.127

M3 - 会议文章

AN - SCOPUS:21044441945

SN - 0022-0248

VL - 278

SP - 619

EP - 623

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - 13th International Conference on Molecular Beam Epitaxy

Y2 - 22 August 2004 through 27 August 2004

ER -

MBE-grown high κ gate dielectrics of HfO ₂ and (Hf-Al)O ₂ for Si and III-V semiconductors nano-electronics

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Keywords

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