Measurement of junction temperature in a nitride light-emitting diode

Nie Chuan Chen; Chih Min Lin; Yen Kai Yang; Chi Shen; Tong Wen Wang; Meng Chyi Wu

doi:10.1143/JJAP.47.8779

Measurement of junction temperature in a nitride light-emitting diode

Nie Chuan Chen^*, Chih Min Lin, Yen Kai Yang, Chi Shen, Tong Wen Wang, Meng Chyi Wu

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Journal Article › peer-review

21 Scopus citations

Abstract

The steady junction temperatures of a nitride light-emitting diode (LED) under various currents were measured. The measurements revealed a thermal resistance of R_T = 63.47 K/W. These data were further used to determine the evolution of the junction temperature with time. The transients of the junction temperature after the device was turned on were found to be described effectively on the basis of the theoretical curves. The thermal conductivity of the substrate was deduced and found to be higher for two reasons. The first is related to the optical power carried by photons. The second involves the difference between the p-mesa area and the chip area, which is a unique characteristic of nitride LEDs grown on insulating substrates.

Original language	English
Pages (from-to)	8779-8782
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.47.8779
State	Published - 19 12 2008

Keywords

GaN
Heat flow
Junction temperature
LED
Thermal conductivity

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10.1143/JJAP.47.8779

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title = "Measurement of junction temperature in a nitride light-emitting diode",

abstract = "The steady junction temperatures of a nitride light-emitting diode (LED) under various currents were measured. The measurements revealed a thermal resistance of RT = 63.47 K/W. These data were further used to determine the evolution of the junction temperature with time. The transients of the junction temperature after the device was turned on were found to be described effectively on the basis of the theoretical curves. The thermal conductivity of the substrate was deduced and found to be higher for two reasons. The first is related to the optical power carried by photons. The second involves the difference between the p-mesa area and the chip area, which is a unique characteristic of nitride LEDs grown on insulating substrates.",

keywords = "GaN, Heat flow, Junction temperature, LED, Thermal conductivity",

author = "Chen, {Nie Chuan} and Lin, {Chih Min} and Yang, {Yen Kai} and Chi Shen and Wang, {Tong Wen} and Wu, {Meng Chyi}",

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doi = "10.1143/JJAP.47.8779",

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T1 - Measurement of junction temperature in a nitride light-emitting diode

AU - Chen, Nie Chuan

AU - Lin, Chih Min

AU - Yang, Yen Kai

AU - Shen, Chi

AU - Wang, Tong Wen

AU - Wu, Meng Chyi

PY - 2008/12/19

Y1 - 2008/12/19

N2 - The steady junction temperatures of a nitride light-emitting diode (LED) under various currents were measured. The measurements revealed a thermal resistance of RT = 63.47 K/W. These data were further used to determine the evolution of the junction temperature with time. The transients of the junction temperature after the device was turned on were found to be described effectively on the basis of the theoretical curves. The thermal conductivity of the substrate was deduced and found to be higher for two reasons. The first is related to the optical power carried by photons. The second involves the difference between the p-mesa area and the chip area, which is a unique characteristic of nitride LEDs grown on insulating substrates.

AB - The steady junction temperatures of a nitride light-emitting diode (LED) under various currents were measured. The measurements revealed a thermal resistance of RT = 63.47 K/W. These data were further used to determine the evolution of the junction temperature with time. The transients of the junction temperature after the device was turned on were found to be described effectively on the basis of the theoretical curves. The thermal conductivity of the substrate was deduced and found to be higher for two reasons. The first is related to the optical power carried by photons. The second involves the difference between the p-mesa area and the chip area, which is a unique characteristic of nitride LEDs grown on insulating substrates.

KW - GaN

KW - Heat flow

KW - Junction temperature

KW - LED

KW - Thermal conductivity

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DO - 10.1143/JJAP.47.8779

M3 - 文章

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SP - 8779

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JO - Japanese Journal of Applied Physics

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ER -

Measurement of junction temperature in a nitride light-emitting diode

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Keywords

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